Turn-Around of Threshold Voltage in Gate Bias Stressed p-Channel Power Vertical Double-Diffused Metal–Oxide–Semiconductor Transistors

Author(s)
Davidovic, Vojkan
Stojadinovic, Ninoslav
Dankovic, Danijel
Golubovic, Snezana
Manic, Ivica
Djoric-Veljkovic, Snezana
Dimitrijev, Sima
Griffith University Author(s)
Year published
2008
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Journal Title
Japanese Journal of Applied Physics
Volume
47
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Copyright Statement
Self-archiving of the author-manuscript version is not yet supported by this journal. Please refer to the journal link for access to the definitive, published version or contact the author[s] for more information.
Subject
Mathematical sciences
Physical sciences
Engineering
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