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dc.contributor.authorDavidovic, Vojkan
dc.contributor.authorStojadinovic, Ninoslav
dc.contributor.authorDankovic, Danijel
dc.contributor.authorGolubovic, Snezana
dc.contributor.authorManic, Ivica
dc.contributor.authorDjoric-Veljkovic, Snezana
dc.contributor.authorDimitrijev, Sima
dc.contributor.editorAkihiro Kono (Editor-in-Chief), Yoshiaki Nakano (Editor-in-Chief)
dc.date.accessioned2017-05-03T11:51:41Z
dc.date.available2017-05-03T11:51:41Z
dc.date.issued2008
dc.date.modified2011-10-18T07:25:55Z
dc.identifier.issn0021-4922
dc.identifier.urihttp://hdl.handle.net/10072/23557
dc.description.peerreviewedYes
dc.description.publicationstatusYes
dc.languageEnglish
dc.language.isoeng
dc.publisherInstituite of Pure and Applied Physics
dc.publisher.placeJapan
dc.publisher.urihttp://jjap.jsap.jp/link?JJAP/47/6272
dc.relation.ispartofstudentpublicationN
dc.relation.ispartofpagefrom6272
dc.relation.ispartofpageto6276
dc.relation.ispartofjournalJapanese Journal of Applied Physics
dc.relation.ispartofvolume47
dc.rights.retentionY
dc.subject.fieldofresearchMathematical sciences
dc.subject.fieldofresearchPhysical sciences
dc.subject.fieldofresearchEngineering
dc.subject.fieldofresearchcode49
dc.subject.fieldofresearchcode51
dc.subject.fieldofresearchcode40
dc.titleTurn-Around of Threshold Voltage in Gate Bias Stressed p-Channel Power Vertical Double-Diffused Metal–Oxide–Semiconductor Transistors
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.rights.copyrightSelf-archiving of the author-manuscript version is not yet supported by this journal. Please refer to the journal link for access to the definitive, published version or contact the author[s] for more information.
gro.date.issued2008
gro.hasfulltextNo Full Text
gro.griffith.authorDimitrijev, Sima


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