Nonvolatile dynamic memories

Dimitrijev, S

doi:10.1109/ICMEL.2004.1314647

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Author(s)

Dimitrijev, S

Griffith University Author(s)

Dimitrijev, Sima

Year published

2004

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Abstract

This paper demonstrates that electronically passivated Si-Si02 interface enables the development of nonvolatilc dynamic memories. Experimental results on chargeretention iimes are presented to illustrate that the Si DRAMs would become nonvolatile memories if implemented into Sic. The disadvantages of the DRAM cell (ICIT), in terms of limited memory-capacity increase, are discussed to highlight the need for development of superior memory cells.This paper demonstrates that electronically passivated Si-Si02 interface enables the development of nonvolatilc dynamic memories. Experimental results on chargeretention iimes are presented to illustrate that the Si DRAMs would become nonvolatile memories if implemented into Sic. The disadvantages of the DRAM cell (ICIT), in terms of limited memory-capacity increase, are discussed to highlight the need for development of superior memory cells.
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Conference Title

2004 24TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS, VOLS 1 AND 2

Volume

24 I

DOI

https://doi.org/10.1109/ICMEL.2004.1314647

Copyright Statement

© 2004 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

Subject

Microelectronics

Publication URI

http://hdl.handle.net/10072/24449

Collection

Conference outputs