Nonvolatile dynamic memories
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This paper demonstrates that electronically passivated Si-Si02 interface enables the development of nonvolatilc dynamic memories. Experimental results on chargeretention iimes are presented to illustrate that the Si DRAMs would become nonvolatile memories if implemented into Sic. The disadvantages of the DRAM cell (ICIT), in terms of limited memory-capacity increase, are discussed to highlight the need for development of superior memory cells.
24th International Conference on Microelectronics. Proceedings
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Microelectronics and Integrated Circuits