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  • Nonvolatile dynamic memories

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    55709_1.pdf (308.4Kb)
    Author(s)
    Dimitrijev, S
    Griffith University Author(s)
    Dimitrijev, Sima
    Year published
    2004
    Metadata
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    Abstract
    This paper demonstrates that electronically passivated Si-Si02 interface enables the development of nonvolatilc dynamic memories. Experimental results on chargeretention iimes are presented to illustrate that the Si DRAMs would become nonvolatile memories if implemented into Sic. The disadvantages of the DRAM cell (ICIT), in terms of limited memory-capacity increase, are discussed to highlight the need for development of superior memory cells.This paper demonstrates that electronically passivated Si-Si02 interface enables the development of nonvolatilc dynamic memories. Experimental results on chargeretention iimes are presented to illustrate that the Si DRAMs would become nonvolatile memories if implemented into Sic. The disadvantages of the DRAM cell (ICIT), in terms of limited memory-capacity increase, are discussed to highlight the need for development of superior memory cells.
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    Conference Title
    2004 24TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS, VOLS 1 AND 2
    Volume
    24 I
    DOI
    https://doi.org/10.1109/ICMEL.2004.1314647
    Copyright Statement
    © 2004 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
    Subject
    Microelectronics
    Publication URI
    http://hdl.handle.net/10072/24449
    Collection
    • Conference outputs

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