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  • QsRAM: the new memory technology

    Author(s)
    Dimitrijev, S
    Harrison, HB
    Griffith University Author(s)
    Harrison, Barry B.
    Dimitrijev, Sima
    Year published
    2004
    Metadata
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    Abstract
    In this paper we suggest a new near ideal memory technology to replace existing FLASH and DRAM, the new technology being based on the semiconducting material Silicon Carbide (SiC). The technology will not only be a replacement for FLASH and DRAM but will open up new and novel applications because of its unique capabilities. We provide the reasons why SiC will become the next generation memory material and suggest new structures that will be exploited by a new company QsRAM that will lead the market push for these new memories.In this paper we suggest a new near ideal memory technology to replace existing FLASH and DRAM, the new technology being based on the semiconducting material Silicon Carbide (SiC). The technology will not only be a replacement for FLASH and DRAM but will open up new and novel applications because of its unique capabilities. We provide the reasons why SiC will become the next generation memory material and suggest new structures that will be exploited by a new company QsRAM that will lead the market push for these new memories.
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    Conference Title
    MICROELECTRONICS: DESIGN, TECHNOLOGY, AND PACKAGING
    Volume
    5274
    DOI
    https://doi.org/10.1117/12.531136
    Publication URI
    http://hdl.handle.net/10072/25311
    Collection
    • Conference outputs

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