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dc.contributor.authorDimitrijev, Simaen_US
dc.contributor.authorHarrison, Barryen_US
dc.date.accessioned2017-04-24T14:53:26Z
dc.date.available2017-04-24T14:53:26Z
dc.date.issued2004en_US
dc.date.modified2009-08-25T07:40:41Z
dc.identifier.doi10.1117/12.531136en_AU
dc.identifier.urihttp://hdl.handle.net/10072/25311
dc.description.abstractIn this paper we suggest a new near ideal memory technology to replace existing FLASH and DRAM, the new technology being based on the semiconducting material Silicon Carbide (SiC). The technology will not only be a replacement for FLASH and DRAM but will open up new and novel applications because of its unique capabilities. We provide the reasons why SiC will become the next generation memory material and suggest new structures that will be exploited by a new company QsRAM that will lead the market push for these new memories.en_US
dc.description.peerreviewedYesen_US
dc.description.publicationstatusYesen_AU
dc.languageEnglishen_US
dc.language.isoen_AU
dc.publisherSPIEen_US
dc.publisher.placeBellingham WA USAen_US
dc.relation.ispartofconferencenameMicroelectronics: Design, Technology, and Packagingen_US
dc.relation.ispartofconferencetitleMicroelectronics: Design, Technology, and Packaging (SPIE vol. 5274)en_US
dc.relation.ispartofdatefrom2003-12-10en_US
dc.relation.ispartofdateto2003-12-10en_US
dc.relation.ispartoflocationPerth, Australiaen_US
dc.subject.fieldofresearchcode299999en_US
dc.titleQsRAM: the new memory technologyen_US
dc.typeConference outputen_US
dc.type.descriptionE1 - Conference Publications (HERDC)en_US
dc.type.codeE - Conference Publicationsen_US
gro.facultyGriffith Sciences, Griffith School of Engineeringen_US
gro.date.issued2004
gro.hasfulltextNo Full Text


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    Contains papers delivered by Griffith authors at national and international conferences.

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