A model for measurement of the states in a coupled-dot qubit
Abstract
We propose a quantum trajectory analysis of a scheme to measure the states of a coupled-dot device (qubit) where there is a fluctuating energy gap ? between the two states. The system consists of the qubit and a readout dot coupled to source and drain leads. The tunnel rate through the detector is conditioned by the occupation number of the nearer quantum dot (target) of the qubit and therefore probes the states of the qubit. We derive a Lindblad-form master equation to calculate the unconditional evolution of the qubit and a conditional stochastic master equation calculating the conditional evolution for different tunneling ...
View more >We propose a quantum trajectory analysis of a scheme to measure the states of a coupled-dot device (qubit) where there is a fluctuating energy gap ? between the two states. The system consists of the qubit and a readout dot coupled to source and drain leads. The tunnel rate through the detector is conditioned by the occupation number of the nearer quantum dot (target) of the qubit and therefore probes the states of the qubit. We derive a Lindblad-form master equation to calculate the unconditional evolution of the qubit and a conditional stochastic master equation calculating the conditional evolution for different tunneling rates. The results show the effects of various device parameters and provide the optimum selection and combination of the system structure.
View less >
View more >We propose a quantum trajectory analysis of a scheme to measure the states of a coupled-dot device (qubit) where there is a fluctuating energy gap ? between the two states. The system consists of the qubit and a readout dot coupled to source and drain leads. The tunnel rate through the detector is conditioned by the occupation number of the nearer quantum dot (target) of the qubit and therefore probes the states of the qubit. We derive a Lindblad-form master equation to calculate the unconditional evolution of the qubit and a conditional stochastic master equation calculating the conditional evolution for different tunneling rates. The results show the effects of various device parameters and provide the optimum selection and combination of the system structure.
View less >
Journal Title
Journal of Physics: Condensed Matter
Volume
21
Copyright Statement
© 2009 Institute of Physics Publishing. This is the author-manuscript version of this paper. Reproduced in accordance with the copyright policy of the publisher.Please refer to the journal's website for access to the definitive, published version.
Subject
Quantum Information, Computation and Communication
Condensed Matter Physics
Materials Engineering
Nanotechnology