Spin-dependent Hall effect in degenerate semiconductors: A theoretical study
Author(s)
Miah, M Idrish
Griffith University Author(s)
Year published
2008
Metadata
Show full item recordAbstract
The spin-dependent Hall (SDH) effect in degenerate semiconductors is investigated theoretically. Starting from a two-component drift-diffusion equation, an expression for SDH voltage (VSDH) is derived, and drift and diffusive contributions to VSDH are studied. For the possible enhancement of the diffusive part, degenerate and nondegenerate cases are examined. We find that due to an increase in the diffusion coefficient V SDH increases in a degenerate semiconductor, consistent with the experimental observations. The expression for VSDH is reduced in three limiting cases, namely diffusive, drift-diffusion crossover and drift, ...
View more >The spin-dependent Hall (SDH) effect in degenerate semiconductors is investigated theoretically. Starting from a two-component drift-diffusion equation, an expression for SDH voltage (VSDH) is derived, and drift and diffusive contributions to VSDH are studied. For the possible enhancement of the diffusive part, degenerate and nondegenerate cases are examined. We find that due to an increase in the diffusion coefficient V SDH increases in a degenerate semiconductor, consistent with the experimental observations. The expression for VSDH is reduced in three limiting cases, namely diffusive, drift-diffusion crossover and drift, and is analysed. The results agree with those obtained in recent theoretical investigations. 頲008 The Royal Swedish Academy of Sciences.
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View more >The spin-dependent Hall (SDH) effect in degenerate semiconductors is investigated theoretically. Starting from a two-component drift-diffusion equation, an expression for SDH voltage (VSDH) is derived, and drift and diffusive contributions to VSDH are studied. For the possible enhancement of the diffusive part, degenerate and nondegenerate cases are examined. We find that due to an increase in the diffusion coefficient V SDH increases in a degenerate semiconductor, consistent with the experimental observations. The expression for VSDH is reduced in three limiting cases, namely diffusive, drift-diffusion crossover and drift, and is analysed. The results agree with those obtained in recent theoretical investigations. 頲008 The Royal Swedish Academy of Sciences.
View less >
Journal Title
Physica Scripta: an international journal for experimental and theoretical physics
Volume
78
Issue
4
Publisher URI
Subject
Mathematical sciences
Physical sciences
Electrical and electromagnetic methods in geophysics