Diffusive to drift-diffusion crossover of spin transport in the low-field regime
Electric field-dependent electron spin diffusion in GaAs is investigated experimentally. We consider the three spin transport regimes, namely diffusive, drift-diffusion crossover, and drift. Of them, spin transport in the diffusive and drift-diffusion crossover regimes is studied in more detail. We also estimate the drift-diffusion crossover field (Ex) and the intrinsic spin diffusion length (ds) in the nondegenerate regime. The estimated value of ds is found to be 1.74 孬 a factor of 0.87 lower than that reported in the literature. The technique, however, demonstrates it as a convenient and useful tool to measure Ex and ds in semiconductors. 頲008 American Institute of Physics.
Applied Physics Letters
Electrical and Electromagnetic Methods in Geophysics