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dc.contributor.authorMiah, M Idrish
dc.date.accessioned2017-05-03T16:59:16Z
dc.date.available2017-05-03T16:59:16Z
dc.date.issued2008
dc.date.modified2010-08-30T07:00:02Z
dc.identifier.issn0306-8919
dc.identifier.doi10.1007/s11082-009-9296-z
dc.identifier.urihttp://hdl.handle.net/10072/26322
dc.description.abstractWe report the experimental observation of the pure anomalous Hall effect (AHE) in nonmagnetic zinc-blende semiconductors without application of the external magnetic fields. The AHE without any contribution from the ordinary Hall current originates from nonequilibrium magnetization induced by spin-polarized electrons generated by the circularly polarized light (s). We measure the pure AHE as a function of the external bias, crystal temperature and pumping s-photon energy. The results of their dependences are discussed.
dc.description.peerreviewedYes
dc.description.publicationstatusYes
dc.languageEnglish
dc.language.isoeng
dc.publisherSpringer
dc.publisher.placeUnited Kingdom
dc.relation.ispartofstudentpublicationY
dc.relation.ispartofpagefrom1033
dc.relation.ispartofpageto1042
dc.relation.ispartofissue13
dc.relation.ispartofjournalOptical and Quantum Electronics
dc.relation.ispartofvolume40
dc.rights.retentionY
dc.subject.fieldofresearchAtomic, molecular and optical physics
dc.subject.fieldofresearchcode5102
dc.titlePure anomalous Hall effect in nonmagnetic zinc-blende semiconductors
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.facultyGriffith Sciences, School of Natural Sciences
gro.date.issued2008
gro.hasfulltextNo Full Text
gro.griffith.authorMiah, Mohammad I.


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