Photo-Induced Spin Dynamics in Semiconductor Quantum Wells
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Author(s)
Miah, M Idrish
Griffith University Author(s)
Year published
2009
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We experimentally investigate the dynamics of spins in GaAs quantum wells under applied electric bias by photoluminescence (PL) measurements excited with circularly polarized light. The bias-dependent circular polarization of PL (P PL) with and without magnetic field is studied. The P PL without magnetic field is found to be decayed with an enhancement of increasing the strength of the negative bias. However, P PL in a transverse magnetic field shows oscillations under an electric bias, indicating that the precession of electron spin occurs in quantum wells. The results are discussed based on the electron-hole exchange ...
View more >We experimentally investigate the dynamics of spins in GaAs quantum wells under applied electric bias by photoluminescence (PL) measurements excited with circularly polarized light. The bias-dependent circular polarization of PL (P PL) with and without magnetic field is studied. The P PL without magnetic field is found to be decayed with an enhancement of increasing the strength of the negative bias. However, P PL in a transverse magnetic field shows oscillations under an electric bias, indicating that the precession of electron spin occurs in quantum wells. The results are discussed based on the electron-hole exchange interaction in the electric field.
View less >
View more >We experimentally investigate the dynamics of spins in GaAs quantum wells under applied electric bias by photoluminescence (PL) measurements excited with circularly polarized light. The bias-dependent circular polarization of PL (P PL) with and without magnetic field is studied. The P PL without magnetic field is found to be decayed with an enhancement of increasing the strength of the negative bias. However, P PL in a transverse magnetic field shows oscillations under an electric bias, indicating that the precession of electron spin occurs in quantum wells. The results are discussed based on the electron-hole exchange interaction in the electric field.
View less >
Journal Title
Nanoscale Research Letters
Volume
4
Issue
4
Copyright Statement
© The Author(s) 2009. This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
Subject
Condensed matter physics
Materials engineering
Nanotechnology