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dc.contributor.authorMiah, Mohammaden_US
dc.contributor.authorGray, Evanen_US
dc.contributor.editorA. Genceren_US
dc.date.accessioned2017-05-03T17:00:19Z
dc.date.available2017-05-03T17:00:19Z
dc.date.issued2009en_US
dc.date.modified2013-06-21T03:37:37Z
dc.identifier.refurihttp://www.icsm2008.org/en_US
dc.identifier.doi10.1088/1742-6596/153/1/012062en_US
dc.identifier.urihttp://hdl.handle.net/10072/29520
dc.description.abstractWe describe an experiment which investigates the effect of a longitudinal electric field on the spin-polarized carriers generated by a circularly polarized light in semiconductors. Our experiment observes the effect as a Hall voltage resulting from nonequilibrium magnetization induced by the spin-carrier electrons accumulating at the transverse boundaries of the sample as a result of asymmetries in scattering for spin-up and spin-down electrons in the presence of spin-orbit interaction. It is found that the effect depends on the longitudinal electric field and doping density as well as on temperature. The results are presented by discussing the dominant spin relaxation mechanisms in semiconductors.en_US
dc.description.peerreviewedYesen_US
dc.description.publicationstatusYesen_US
dc.format.extent482784 bytes
dc.format.mimetypeapplication/pdf
dc.languageEnglishen_US
dc.language.isoen_US
dc.publisherIOP Publishingen_US
dc.publisher.placeUnited Kingdomen_US
dc.relation.ispartofstudentpublicationNen_US
dc.relation.ispartofconferencenameInternational Conference on Superconductivity and Magnetism (ICSM2008)en_US
dc.relation.ispartofconferencetitleJournal of Physics: Conference Seriesen_US
dc.relation.ispartofdatefrom2009-09-28en_US
dc.relation.ispartofdateto2009-10-04en_US
dc.relation.ispartoflocationChinaen_US
dc.rights.retentionYen_US
dc.subject.fieldofresearchcode240203en_US
dc.titleOptically induced Hall effect in semiconductorsen_US
dc.typeConference outputen_US
dc.type.descriptionE1 - Conference Publications (HERDC)en_US
dc.type.codeE - Conference Publicationsen_US
gro.facultyGriffith Sciences, School of Natural Sciencesen_US
gro.rights.copyrightPublished under licence in Journal of Physics: Conference Series by IOP Publishing Ltd. Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the authors and Optically induced Hall effect in semiconductors, 2009, Volume 153 (1) and http://dx.doi.org/10.1088/1742-6596/153/1/012062.en_US
gro.date.issued2009
gro.hasfulltextFull Text


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    Contains papers delivered by Griffith authors at national and international conferences.

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