Synthesis of indium nanowires by galvanic displacement and their optical properties

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Author(s)
Li, Haohua
Liang, Chaolun
Liu, Meng
Zhong, Kuan
Tong, Yexiang
Liu, Peng
Hope, Greg A
Griffith University Author(s)
Year published
2009
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Single crystalline indium nanowires were prepared on Zn substrate which had been treated in concentrated sulphuric acid by galvanic displacement in the 0.002 mol L-1 In2(SO4)3-0.002 mol L-1 SeO2-0.02 mol L-1 SDS-0.01 mol L-1 citric acid aqueous solution. The typical diameter of indium nanowires is 30 nm and most of the nanowires are over 30 孠in length. XRD, HRTEM, SAED and structural simulation clearly demonstrate that indium nanowires are single-crystalline with the tetragonal structure, the growth direction of the nanowires is along [100] facet. The UV-Vis absorption spectra showed that indium nanowires display typical ...
View more >Single crystalline indium nanowires were prepared on Zn substrate which had been treated in concentrated sulphuric acid by galvanic displacement in the 0.002 mol L-1 In2(SO4)3-0.002 mol L-1 SeO2-0.02 mol L-1 SDS-0.01 mol L-1 citric acid aqueous solution. The typical diameter of indium nanowires is 30 nm and most of the nanowires are over 30 孠in length. XRD, HRTEM, SAED and structural simulation clearly demonstrate that indium nanowires are single-crystalline with the tetragonal structure, the growth direction of the nanowires is along [100] facet. The UV-Vis absorption spectra showed that indium nanowires display typical transverse resonance of SPR properties. The surfactant (SDS) and the pretreatment of Zn substrate play an important role in the growth process. The mechanism of indium nanowires growth is the synergic effect of treated Zn substrate (hard template) and SDS (soft template).
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View more >Single crystalline indium nanowires were prepared on Zn substrate which had been treated in concentrated sulphuric acid by galvanic displacement in the 0.002 mol L-1 In2(SO4)3-0.002 mol L-1 SeO2-0.02 mol L-1 SDS-0.01 mol L-1 citric acid aqueous solution. The typical diameter of indium nanowires is 30 nm and most of the nanowires are over 30 孠in length. XRD, HRTEM, SAED and structural simulation clearly demonstrate that indium nanowires are single-crystalline with the tetragonal structure, the growth direction of the nanowires is along [100] facet. The UV-Vis absorption spectra showed that indium nanowires display typical transverse resonance of SPR properties. The surfactant (SDS) and the pretreatment of Zn substrate play an important role in the growth process. The mechanism of indium nanowires growth is the synergic effect of treated Zn substrate (hard template) and SDS (soft template).
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Journal Title
Nanoscale Research Letters
Volume
4
Issue
1
Copyright Statement
© The Author(s) 2008. This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
Subject
Condensed matter physics
Electronic and magnetic properties of condensed matter; superconductivity
Main group metal chemistry
Materials engineering
Nanotechnology