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dc.contributor.authorWang, Lien_US
dc.contributor.authorDimitrijev, Simaen_US
dc.contributor.authorHan, Jishengen_US
dc.contributor.authorIacopi, Francescaen_US
dc.contributor.authorZou, Jinen_US
dc.date.accessioned2017-05-03T15:02:40Z
dc.date.available2017-05-03T15:02:40Z
dc.date.issued2009en_US
dc.date.modified2010-06-16T05:42:26Z
dc.identifier.issn00220248en_US
dc.identifier.doi10.1016/j.jcrysgro.2009.07.036en_AU
dc.identifier.urihttp://hdl.handle.net/10072/30350
dc.description.abstractThis paper presents a study of the transition between amorphous and crystalline phases of SiC films deposited on Si(1 0 0) substrate using H3SiCH3 as a single precursor by a conventional low-pressure chemical vapor deposition method in a hot-wall reactor. The microstructure of SiC, characterized by X-ray diffraction and high-resolution transmission electron microscopy, is found to vary with substrate temperature and H3SiCH3 pressure. The grain size decreases with increasing MS pressure at a given temperature and also decreases with reducing temperature at a given MS pressure. The deposition rates are exponentially dependent on the substrate temperature with the activation energy of around 2.6 eV. The hydrogen compositional concentration in the deposited SiC films, determined by secondary ion mass spectrometry depth profiling, is only 2.9% in the nanocrystalline SiC but more than 10% in the amorphous SiC, decreasing greatly with increasing deposition temperature. No hydride bonds are detected by Fourier transform infrared spectroscopy measurements. The chemical order of the deposited SiC films improves with increasing deposition temperature.en_US
dc.description.peerreviewedYesen_US
dc.description.publicationstatusYesen_AU
dc.format.extent450598 bytes
dc.format.mimetypeapplication/pdf
dc.languageEnglishen_US
dc.language.isoen_AU
dc.publisherElsevier BVen_US
dc.publisher.placeNetherlandsen_US
dc.relation.ispartofstudentpublicationNen_AU
dc.relation.ispartofpagefrom4442en_US
dc.relation.ispartofpageto4446en_US
dc.relation.ispartofissue19en_US
dc.relation.ispartofjournalJournal of Crystal Growthen_US
dc.relation.ispartofvolume311en_US
dc.rights.retentionYen_AU
dc.subject.fieldofresearchSurfaces and Structural Properties of Condensed Matteren_US
dc.subject.fieldofresearchcode020406en_US
dc.titleTransition between amorphous and crystalline phases of SiC deposited on Si substrate using H3SiCH3en_US
dc.typeJournal articleen_US
dc.type.descriptionC1 - Peer Reviewed (HERDC)en_US
dc.type.codeC - Journal Articlesen_US
gro.facultyGriffith Sciences, Griffith School of Engineeringen_US
gro.rights.copyrightCopyright 2009 Elsevier B.V.. This is the author-manuscript version of this paper. Reproduced in accordance with the copyright policy of the publisher. Please refer to the journal's website for access to the definitive, published version.en_AU
gro.date.issued2009
gro.hasfulltextFull Text


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