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dc.contributor.authorRowlands, Daviden_US
dc.contributor.authorDimitrijev, Simaen_US
dc.date.accessioned2017-04-24T10:38:09Z
dc.date.available2017-04-24T10:38:09Z
dc.date.issued2000en_US
dc.date.modified2010-10-12T06:55:44Z
dc.identifier.issn08946507en_US
dc.identifier.doi10.1109/66.892635en_AU
dc.identifier.urihttp://hdl.handle.net/10072/3041
dc.description.abstractAn analytic nonlinear equation for variance was derived along with a method based on response surface mapping techniques to calculate the variance using the proposed equation. The technique was applied to the threshold voltage of a 0.1-孠silicon-on-insulator MOS device, and the variance value obtained was verified using Monte Carlo simulation. The threshold voltage dependence upon active-layer thickness was found to be highly nonlinear due to the device's going from the fully depleted to the partially depleted regime. Analysis of the variance showed that the effect of the nonlinear terms (18.7%) is more important than the effect of the mixed term (-0.7%) and almost as important as the contribution of the second most dominant input-process parameter (23.6%). This illustrates the importance of the proposed nonlinear equationen_US
dc.description.peerreviewedYesen_US
dc.description.publicationstatusYesen_AU
dc.format.extent140576 bytes
dc.format.extent19727 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypetext/plain
dc.languageEnglishen_US
dc.language.isoen_AU
dc.publisherInstitute of Electrical and Electronics Engineersen_US
dc.publisher.placeUSAen_US
dc.relation.ispartofpagefrom492en_US
dc.relation.ispartofpageto496en_US
dc.relation.ispartofjournalIEEE Transactions on Semiconductor Manufacturingen_US
dc.relation.ispartofvolume13en_US
dc.subject.fieldofresearchHISTORY AND ARCHAEOLOGYen_US
dc.subject.fieldofresearchcode210000en_US
dc.titleDerivation of a nonlinear variance equation and its application to SOI Technologyen_US
dc.typeJournal articleen_US
dc.type.descriptionC1 - Peer Reviewed (HERDC)en_US
dc.type.codeC - Journal Articlesen_US
gro.facultyGriffith Sciences, Griffith School of Engineeringen_US
gro.rights.copyrightCopyright 2000 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_AU
gro.date.issued2000
gro.hasfulltextFull Text


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