Analysis of Fowler-Nordheim injection in NO nitrided gate oxide grown on n-type 4H-SiC
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Fowler-Nordheim injection in NO nitrided gate oxides, grown on n-type 4H-SiC, has been investigated at room temperature and 300î The results show that NO increases the electron injection barrier height to a value which is very close to the theoretical value at room temperature. Excessive temperature dependence of the electron injection barrier height is also significantly reduced by the nitridation.
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