Electric-field effects in optically generated spin transport

Abstract

Transport of spin-polarized electrons in semiconductors is studied experimentally. Spins are generated by optical excitation because of the selection rules governing optical transitions from heavy-hole and light-hole states to conduction-band states. Experiments designed for the control of spins in semiconductors investigate the bias-dependent spin transport process and detect the spin-polarized electrons during transport. A strong bias dependence is observed. The electric-field effects on the spin-polarized electron transport are also found to be depended on the excitation photon energy and temperature. Based on a field-dependent spin relaxation mechanism, the electric-field effects in the transport process are discussed.