Charge Trapping Properties of 3C- and 4H-SiC MOS Capacitors With Nitrided Gate Oxides
Abstract
Silicon-carbide-based MOS capacitors were formed on either 3C (epitaxial on Si) or 4H substrates and using SiO2 gate dielectrics both with and without interfacial nitrogen. The charge trapping properties of these structures were examined after exposure to ionizing radiation. In all cases interfacial nitrogen results in improved trap density and increased oxide charge trapping. For equivalent nitrogen content, 3C-based devices exhibit more charge trapping than the 4H-based equivalents.
Journal Title
IEEE Transactions on Nuclear Science
Volume
56
Issue
6
Copyright Statement
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Subject
Other physical sciences
Biomedical engineering
Microelectronics