Stacking faults in SiC crystal grown by spontaneous nucleation sublimation method
Author(s)
Hu, Xiaobu
Xu, Xiangang
Li, Xianxiang
Jiang, Shouzheng
Li, Juan
Wang, Li
Wang, Jiyang
Jiang, Mihua
Griffith University Author(s)
Year published
2006
Metadata
Show full item recordAbstract
SiC polycrystalline was grown by a spontaneous nucleation sublimation method. The microstructures of SiC polycrystalline were observed by transmission electron microscopy. It was found that SiC polycrystalline has highly preferential orientation with the (0 0 0 1) plane lying on the growth surface and there are only small misorientations among different grains. A great number of stacking faults were observed in the SiC polycrystalline film. These stacking faults were tilted to the film surface with different angles. Based on the extinction rule, the properties of the stacking faults were determined.SiC polycrystalline was grown by a spontaneous nucleation sublimation method. The microstructures of SiC polycrystalline were observed by transmission electron microscopy. It was found that SiC polycrystalline has highly preferential orientation with the (0 0 0 1) plane lying on the growth surface and there are only small misorientations among different grains. A great number of stacking faults were observed in the SiC polycrystalline film. These stacking faults were tilted to the film surface with different angles. Based on the extinction rule, the properties of the stacking faults were determined.
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Journal Title
Journal of Crystal Growth
Volume
292
Issue
2
Subject
Surfaces and Structural Properties of Condensed Matter
Macromolecular and Materials Chemistry
Physical Chemistry (incl. Structural)
Materials Engineering