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  • Stacking faults in SiC crystal grown by spontaneous nucleation sublimation method

    Author(s)
    Hu, Xiaobu
    Xu, Xiangang
    Li, Xianxiang
    Jiang, Shouzheng
    Li, Juan
    Wang, Li
    Wang, Jiyang
    Jiang, Mihua
    Griffith University Author(s)
    Wang, Li
    Year published
    2006
    Metadata
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    Abstract
    SiC polycrystalline was grown by a spontaneous nucleation sublimation method. The microstructures of SiC polycrystalline were observed by transmission electron microscopy. It was found that SiC polycrystalline has highly preferential orientation with the (0 0 0 1) plane lying on the growth surface and there are only small misorientations among different grains. A great number of stacking faults were observed in the SiC polycrystalline film. These stacking faults were tilted to the film surface with different angles. Based on the extinction rule, the properties of the stacking faults were determined.SiC polycrystalline was grown by a spontaneous nucleation sublimation method. The microstructures of SiC polycrystalline were observed by transmission electron microscopy. It was found that SiC polycrystalline has highly preferential orientation with the (0 0 0 1) plane lying on the growth surface and there are only small misorientations among different grains. A great number of stacking faults were observed in the SiC polycrystalline film. These stacking faults were tilted to the film surface with different angles. Based on the extinction rule, the properties of the stacking faults were determined.
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    Journal Title
    Journal of Crystal Growth
    Volume
    292
    Issue
    2
    Subject
    Surfaces and Structural Properties of Condensed Matter
    Macromolecular and Materials Chemistry
    Physical Chemistry (incl. Structural)
    Materials Engineering
    Publication URI
    http://hdl.handle.net/10072/33080
    Collection
    • Journal articles

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