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  • RF Sputtering of ZnO (002) Thin Films on Top of 3C-SiC-on-Si (100) Substrates for Low Cost Piezoelectric Devices

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    Author(s)
    Sasi, V Valliyil
    Iqbal, A
    Chaik, K
    Tanner, P
    Iacopi, A
    Mohd-Yasin, F
    Griffith University Author(s)
    Tanner, Philip G.
    Iacopi, Alan V.
    Chaik, Kien C.
    Mohd-Yasin, Faisal
    Iqbal, Abid
    Valliyil Sasi, Visakh
    Year published
    2016
    Metadata
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    Abstract
    In this paper, we deposited c-axis oriented ZnO thin films on top of epitaxial 3C-SiC/Si (100) substrates using RF magnetron sputtering. We investigated the effect of O2/Ar ratio and the post-annealing temperature. The grazing angle incident x-ray diffraction results show that ZnO thin-films are highly oriented along the (002) crystalline direction between the O2/Ar ratio of 30% to 50%, at the post-annealing temperature of 600 ˚C in nitrogen environment. The recipe from this work can be used to develop low cost piezoelectric devices such as an energy harvester.In this paper, we deposited c-axis oriented ZnO thin films on top of epitaxial 3C-SiC/Si (100) substrates using RF magnetron sputtering. We investigated the effect of O2/Ar ratio and the post-annealing temperature. The grazing angle incident x-ray diffraction results show that ZnO thin-films are highly oriented along the (002) crystalline direction between the O2/Ar ratio of 30% to 50%, at the post-annealing temperature of 600 ˚C in nitrogen environment. The recipe from this work can be used to develop low cost piezoelectric devices such as an energy harvester.
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    Conference Title
    PROCEEDINGS OF THE 30TH ANNIVERSARY EUROSENSORS CONFERENCE - EUROSENSORS 2016
    Volume
    168
    DOI
    https://doi.org/10.1016/j.proeng.2016.11.346
    Copyright Statement
    © 2016 The Authors. Published by Elsevier Ltd. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/) which permits unrestricted, non-commercial use, distribution and reproduction in any medium, providing that the work is properly cited.
    Subject
    Nanotechnology not elsewhere classified
    Engineering
    Publication URI
    http://hdl.handle.net/10072/338540
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    • Conference outputs

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