Experimental Investigation of Piezoresistive Effect in p-type 4H-SiC
Author(s)
Tuan-Khoa, Nguyen
Hoang-Phuong, Phan
Toan, Dinh
Han, Jisheng
Dimitrijev, Sima
Tanner, Philip
Foisal, Abu Riduan Md
Zhu, Yong
Nam-Trung, Nguyen
Dzung, Viet Dao
Griffith University Author(s)
Year published
2017
Metadata
Show full item recordAbstract
This letter presents for the first time the piezoresistive effect in p-type 4H-SiC. Longitudinal and transverse p-type 4H-SiC piezoresistors with a doping concentration of 1018cm3 were fabricated along [1100] directions. Ni/Al electrodes annealed at 1000C showed a good Ohmic contact then the longitudinal and transverse gauge factors were found to be as high as 31.5 and -27.3, respectively. The large gauge factors, attributed to the change of valance energy bands upon application of mechanical strain, and the linear relationship between the resistance change versus induced strain demonstrate the potential of p-type 4H-SiC ...
View more >This letter presents for the first time the piezoresistive effect in p-type 4H-SiC. Longitudinal and transverse p-type 4H-SiC piezoresistors with a doping concentration of 1018cm3 were fabricated along [1100] directions. Ni/Al electrodes annealed at 1000C showed a good Ohmic contact then the longitudinal and transverse gauge factors were found to be as high as 31.5 and -27.3, respectively. The large gauge factors, attributed to the change of valance energy bands upon application of mechanical strain, and the linear relationship between the resistance change versus induced strain demonstrate the potential of p-type 4H-SiC for mechanical sensing applications.
View less >
View more >This letter presents for the first time the piezoresistive effect in p-type 4H-SiC. Longitudinal and transverse p-type 4H-SiC piezoresistors with a doping concentration of 1018cm3 were fabricated along [1100] directions. Ni/Al electrodes annealed at 1000C showed a good Ohmic contact then the longitudinal and transverse gauge factors were found to be as high as 31.5 and -27.3, respectively. The large gauge factors, attributed to the change of valance energy bands upon application of mechanical strain, and the linear relationship between the resistance change versus induced strain demonstrate the potential of p-type 4H-SiC for mechanical sensing applications.
View less >
Journal Title
IEEE Electron Device Letters
Volume
PP
Issue
99
Subject
Electrical engineering
Electronics, sensors and digital hardware