Piezo-Hall effect and fundamental piezo-Hall coefficients of single crystal n-type 3C-SiC(100) with low carrier concentration
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This article reports the results on the piezo-Hall effect in single crystal n-type 3C-SiC(100) having a low carrier concentration. The effect of the crystallographic orientation on the piezo-Hall effect has been investigated by applying stress to the Hall devices fabricated in different crystallographic directions. Single crystal n-type 3C-SiC(100) and 3C-SiC(111) were grown by low pressure chemical vapor deposition at 1250 °C. Fundamental piezo-Hall coefficients were obtained using the piezo-Hall effect measurements as P11 = (–29 ± 1.3) × 10−11 Pa−1, P12 = (11.06 ± 0.5)× 10−11 Pa−1, and P44 = (–3.4 ± 0.7) × 10−11 Pa−1. It has been observed that the piezo-Hall coefficients of n-type 3C-SiC(100) show a completely different behavior as compared to that of p-type 3C-SiC.
Applied Physics Letters
© 2017 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Volume 110, Issue 16, 162903 (2017) and may be found at https://doi.org/10.1063/1.4980849.
Macromolecular and Materials Chemistry not elsewhere classified