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dc.contributor.authorQamar, Afzaal
dc.contributor.authorDao, Dzung Viet
dc.contributor.authorDinh, Toan
dc.contributor.authorIacopi, Alan
dc.contributor.authorWalker, Glenn
dc.contributor.authorPhan, Hoang-Phuong
dc.contributor.authorHold, Leonie
dc.contributor.authorDimitrijev, Sima
dc.date.accessioned2018-09-04T02:09:54Z
dc.date.available2018-09-04T02:09:54Z
dc.date.issued2017
dc.identifier.issn0003-6951
dc.identifier.doi10.1063/1.4980849
dc.identifier.urihttp://hdl.handle.net/10072/341180
dc.description.abstractThis article reports the results on the piezo-Hall effect in single crystal n-type 3C-SiC(100) having a low carrier concentration. The effect of the crystallographic orientation on the piezo-Hall effect has been investigated by applying stress to the Hall devices fabricated in different crystallographic directions. Single crystal n-type 3C-SiC(100) and 3C-SiC(111) were grown by low pressure chemical vapor deposition at 1250 °C. Fundamental piezo-Hall coefficients were obtained using the piezo-Hall effect measurements as P11 = (–29 ± 1.3) × 10−11 Pa−1, P12 = (11.06 ± 0.5)× 10−11 Pa−1, and P44 = (–3.4 ± 0.7) × 10−11 Pa−1. It has been observed that the piezo-Hall coefficients of n-type 3C-SiC(100) show a completely different behavior as compared to that of p-type 3C-SiC.
dc.description.peerreviewedYes
dc.languageEnglish
dc.language.isoeng
dc.publisherAmerican Institute of Physics
dc.relation.ispartofpagefrom162903-1
dc.relation.ispartofpageto162903-5
dc.relation.ispartofissue16
dc.relation.ispartofjournalApplied Physics Letters
dc.relation.ispartofvolume110
dc.subject.fieldofresearchPhysical sciences
dc.subject.fieldofresearchMacromolecular and materials chemistry not elsewhere classified
dc.subject.fieldofresearchEngineering
dc.subject.fieldofresearchcode51
dc.subject.fieldofresearchcode340399
dc.subject.fieldofresearchcode40
dc.titlePiezo-Hall effect and fundamental piezo-Hall coefficients of single crystal n-type 3C-SiC(100) with low carrier concentration
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
dc.description.versionAccepted Manuscript (AM)
gro.facultyGriffith Sciences, Griffith School of Engineering
gro.rights.copyright© 2017 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Volume 110, Issue 16, 162903 (2017) and may be found at https://doi.org/10.1063/1.4980849.
gro.hasfulltextFull Text
gro.griffith.authorDimitrijev, Sima
gro.griffith.authorDao, Dzung V.


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