Solid source growth of graphene with Ni–Cu catalysts: towards high quality in situ graphene on silicon
Author(s)
Mishra, Neeraj
Boeckl, John
Tadich, Anton
Jones, Robert T
Pigram, Paul J
Edmonds, Mark
Fuhrer, Michael S.
Nichols, Barbara M
Iacopi, Francesca
Year published
2017
Metadata
Show full item recordAbstract
We obtain a monolayer graphene on epitaxial silicon carbide on silicon substrates via solid source growth mediated by a thin Ni–Cu alloy. Raman spectroscopy consistently shows an I D/I G band ratio as low as ~0.2, indicating that the graphene obtained through this method is to-date the best quality monolayer grown on epitaxial silicon carbide films on silicon. We describe the key steps behind the graphene synthesis on the basis of extensive physical, chemical and morphological analyses. We conclude that (1) the oxidation, amorphisation and silicidation of the silicon carbide surface mediated by the Ni, (2) the liquid-phase ...
View more >We obtain a monolayer graphene on epitaxial silicon carbide on silicon substrates via solid source growth mediated by a thin Ni–Cu alloy. Raman spectroscopy consistently shows an I D/I G band ratio as low as ~0.2, indicating that the graphene obtained through this method is to-date the best quality monolayer grown on epitaxial silicon carbide films on silicon. We describe the key steps behind the graphene synthesis on the basis of extensive physical, chemical and morphological analyses. We conclude that (1) the oxidation, amorphisation and silicidation of the silicon carbide surface mediated by the Ni, (2) the liquid-phase epitaxial growth of graphene as well as (3) the self-limiting graphitization provided the molten Cu catalyst, are key characteristics of this novel synthesis method.
View less >
View more >We obtain a monolayer graphene on epitaxial silicon carbide on silicon substrates via solid source growth mediated by a thin Ni–Cu alloy. Raman spectroscopy consistently shows an I D/I G band ratio as low as ~0.2, indicating that the graphene obtained through this method is to-date the best quality monolayer grown on epitaxial silicon carbide films on silicon. We describe the key steps behind the graphene synthesis on the basis of extensive physical, chemical and morphological analyses. We conclude that (1) the oxidation, amorphisation and silicidation of the silicon carbide surface mediated by the Ni, (2) the liquid-phase epitaxial growth of graphene as well as (3) the self-limiting graphitization provided the molten Cu catalyst, are key characteristics of this novel synthesis method.
View less >
Journal Title
Journal of Physics D: Applied Physics
Volume
50
Issue
9
Subject
Physical Sciences not elsewhere classified
Physical Sciences
Engineering