• myGriffith
    • Staff portal
    • Contact Us⌄
      • Future student enquiries 1800 677 728
      • Current student enquiries 1800 154 055
      • International enquiries +61 7 3735 6425
      • General enquiries 07 3735 7111
      • Online enquiries
      • Staff phonebook
    View Item 
    •   Home
    • Griffith Research Online
    • Journal articles
    • View Item
    • Home
    • Griffith Research Online
    • Journal articles
    • View Item
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    Browse

  • All of Griffith Research Online
    • Communities & Collections
    • Authors
    • By Issue Date
    • Titles
  • This Collection
    • Authors
    • By Issue Date
    • Titles
  • Statistics

  • Most Popular Items
  • Statistics by Country
  • Most Popular Authors
  • Support

  • Contact us
  • FAQs
  • Admin login

  • Login
  • RF Sputtering, Post-Annealing Treatment and Characterizations of ZnO (002) Thin Films on 3C-SiC (111)/Si (111) Substrates

    Thumbnail
    View/Open
    SasiPUB4505.pdf (2.538Mb)
    Author(s)
    Sasi, Visakh Valliyil
    Iqbal, Abid
    Chaik, Kien
    Iacopi, Alan
    Mohd-Yasin, Faisal
    Griffith University Author(s)
    Mohd-Yasin, Faisal
    Year published
    2017
    Metadata
    Show full item record
    Abstract
    We report on the radio frequency (RF) sputtering of c-axis oriented ZnO thin films on top of epitaxial 3C-SiC-on-Si (111) substrates, which were then subjected to post-annealing treatment at 400, 600 and 800 °C. Grazing incident X-ray Diffraction (XRD) data show that the Full Width Half Maximum (FWHM) values for O2/Ar ratios between 30% and 60% are consistent, with a mean of 0.325° and a standard deviation of 0.03°. This is largely attributed to the smaller lattice mismatch of 5% between the ZnO (002) and SiC (111) films. The quality of the ZnO films deteriorated at the post-annealing treatment of 800 °C, as demonstrated by ...
    View more >
    We report on the radio frequency (RF) sputtering of c-axis oriented ZnO thin films on top of epitaxial 3C-SiC-on-Si (111) substrates, which were then subjected to post-annealing treatment at 400, 600 and 800 °C. Grazing incident X-ray Diffraction (XRD) data show that the Full Width Half Maximum (FWHM) values for O2/Ar ratios between 30% and 60% are consistent, with a mean of 0.325° and a standard deviation of 0.03°. This is largely attributed to the smaller lattice mismatch of 5% between the ZnO (002) and SiC (111) films. The quality of the ZnO films deteriorated at the post-annealing treatment of 800 °C, as demonstrated by the increasing value of FWHM diffraction peaks, the reducing value of the peak intensity, the reducing percentage of (002) oriented area under the curve, and the increasing value of biaxial stress. We propose a simple growth model to explain the result.
    View less >
    Journal Title
    Micromachines
    Volume
    8
    Issue
    5
    DOI
    https://doi.org/10.3390/mi8050148
    Copyright Statement
    © 2017 The Author(s). Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY 4.0) license, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
    Subject
    Other engineering not elsewhere classified
    Nanotechnology
    Publication URI
    http://hdl.handle.net/10072/342008
    Collection
    • Journal articles

    Footer

    Disclaimer

    • Privacy policy
    • Copyright matters
    • CRICOS Provider - 00233E
    • TEQSA: PRV12076

    Tagline

    • Gold Coast
    • Logan
    • Brisbane - Queensland, Australia
    First Peoples of Australia
    • Aboriginal
    • Torres Strait Islander