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dc.contributor.authorCui, Weili
dc.contributor.authorXu, Shanshan
dc.contributor.authorYan, Bo
dc.contributor.authorGuo, Zhihua
dc.contributor.authorXu, Qun
dc.contributor.authorSumpter, Bobby G
dc.contributor.authorHuang, Jingsong
dc.contributor.authorYin, Shiwei
dc.contributor.authorZhao, Huijun
dc.contributor.authorWang, Yun
dc.date.accessioned2017-08-15T01:53:20Z
dc.date.available2017-08-15T01:53:20Z
dc.date.issued2017
dc.identifier.issn2199-160X
dc.identifier.doi10.1002/aelm.201700024
dc.identifier.urihttp://hdl.handle.net/10072/344135
dc.description.abstractRecently the applications of 2D materials have been broadened by engineering their mechanical, electronic, and optical properties through either lateral or vertical hybridization. Here, the successful design and fabrication of a novel triphasic 2D material by vertically stacking lateral 2H-/1T′-molybdenum disulfide (MoS2) heterostructures on graphene with the assistance of supercritical carbon dioxide is reported. This triphasic structure is experimentally shown to significantly enhance the photocurrent densities for hydrogen evolution reactions. First-principles theoretical analyses reveal that the improved photoresponse should be ascribed to the beneficial band alignments of the triphasic heterostructure. More specifically, electrons can efficiently hop to the 1T′-MoS2 phase via the highly conductive graphene layer as a result of their strong vertical interfacial electronic coupling. Subsequently, the electrons acquired on the 1T′-MoS2 phase are exploited to fill the photoholes on the photoexcited 2H-MoS2 phase through the lateral heterojunction structure, thereby suppressing the recombination process of the photoinduced charge carriers on the 2H-MoS2 phase. This novel triphasic concept promises to open a new avenue to widen the molecular design of 2D hybrid materials for photonics-based energy conversion applications.
dc.description.peerreviewedYes
dc.languageEnglish
dc.language.isoeng
dc.publisherWiley- VCH Verlag GmbH & Co. KGaA
dc.relation.ispartofpagefrom1700024-1
dc.relation.ispartofpageto1700024-8
dc.relation.ispartofissue7
dc.relation.ispartofjournalAdvanced Electronic Materials
dc.relation.ispartofvolume3
dc.subject.fieldofresearchMaterials Engineering not elsewhere classified
dc.subject.fieldofresearchElectrical and Electronic Engineering
dc.subject.fieldofresearchMaterials Engineering
dc.subject.fieldofresearchcode091299
dc.subject.fieldofresearchcode0906
dc.subject.fieldofresearchcode0912
dc.titleTriphasic 2D Materials by Vertically Stacking Laterally Heterostructured 2H-/1T'-MoS2 on Graphene for Enhanced Photoresponse
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.hasfulltextNo Full Text
gro.griffith.authorZhao, Huijun
gro.griffith.authorWang, Yun


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