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  • Direct detection of electron spins and doping effects in spin-polarized electron transport in gallium arsenide

    Author(s)
    Miah, M Idrish
    Griffith University Author(s)
    Miah, Mohammad I.
    Year published
    2010
    Metadata
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    Abstract
    The spin Hall effect allows the direct detection of spins in semiconductors. In this study, electron spins in n-doped gallium arsenide are detected and the effects of n-type doping in gallium arsenide under drift are studied. It is found that the effects in the spin-polarized electron transport increase with increasing doping density in the moderate range, indicating that the introduction of n-type dopants increases the electron-spin lifetimes in gallium arsenide. However, the transport drifting by a high field shows no effects because of destroying the electron-spin polarization in n-doped gallium arsenide. The results are ...
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    The spin Hall effect allows the direct detection of spins in semiconductors. In this study, electron spins in n-doped gallium arsenide are detected and the effects of n-type doping in gallium arsenide under drift are studied. It is found that the effects in the spin-polarized electron transport increase with increasing doping density in the moderate range, indicating that the introduction of n-type dopants increases the electron-spin lifetimes in gallium arsenide. However, the transport drifting by a high field shows no effects because of destroying the electron-spin polarization in n-doped gallium arsenide. The results are discussed in details.
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    Journal Title
    Journal of Materials Science
    Volume
    45
    Issue
    1
    DOI
    https://doi.org/10.1007/s10853-009-3901-1
    Subject
    Chemical sciences
    Engineering
    Materials engineering not elsewhere classified
    Publication URI
    http://hdl.handle.net/10072/34415
    Collection
    • Journal articles

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