Potential of epitaxial silicon carbide microbeam resonators for chemical sensing
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Epitaxial silicon carbide is promising for chemical resonant sensing applications due to its excellent mechanical, thermal, and biochemical properties. This paper reviews six important aspects of (i) silicon carbide heteroepitaxial growth and residual stress; (ii) silicon carbide beam resonators, resonator types, and fabrication processes; (iii) sensing principles, dynamic sensing mechanical performance, and transduction techniques; (iv) damping parameters; (v) mean stress influence on mass sensitivity of SiC flexural microbridge resonators; and (vi) gradient stress impact on SiC cantilever static behavior. The primary goal is to suggest the means to improve the mass sensitivity parameter and application range of epitaxial silicon carbide microbeam resonators and benchmark it with other relevant materials.
Physica Status Solidi A: Applications and Materials Science
© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is the peer reviewed version of the following article: Potential of epitaxial silicon carbide microbeam resonators for chemical sensing, physica status solidi (a), Volume 214, Issue 4,1600437, 2017 which has been published in final form at 10.1002/pssa.201600437. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving (http://olabout.wiley.com/WileyCDA/Section/id-820227.html#terms)
Materials Engineering not elsewhere classified