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  • Experimental evaluation of different passivation layers on the performance of 3kV 4H-SiC BJTs

    Author(s)
    Ghandi, R
    Domeij, M
    Esteve, R
    Buono, B
    Schoner, A
    Han, J
    Dimitrijev, S
    Reshanov, SA
    Zetterling, C-M
    Ostling, M
    Griffith University Author(s)
    Dimitrijev, Sima
    Year published
    2010
    Metadata
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    Abstract
    In this work, the electrical performance in terms of maximum current gain, ON-resistance and blocking capability has been compared for 4H-SiC BJTs passivated with different surface passivation layers. Variation in BJT performance has been correlated to densities of interface traps and fixed oxide charge, as evaluated through MOS capacitors. Six different methods were used to fabricate SiO2 surface passivation on BJT samples from the same wafer. The highest current gain was obtained for PECVD deposited SiO2 which was annealed in N2O ambient at 1100 àduring 3 hours. Variations in breakdown voltage for different surface ...
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    In this work, the electrical performance in terms of maximum current gain, ON-resistance and blocking capability has been compared for 4H-SiC BJTs passivated with different surface passivation layers. Variation in BJT performance has been correlated to densities of interface traps and fixed oxide charge, as evaluated through MOS capacitors. Six different methods were used to fabricate SiO2 surface passivation on BJT samples from the same wafer. The highest current gain was obtained for PECVD deposited SiO2 which was annealed in N2O ambient at 1100 àduring 3 hours. Variations in breakdown voltage for different surface passivations were also found, and this is attributed to differences in fixed oxide charge that can affect the optimum dose of the high voltage JTE termination.
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    Journal Title
    Materials Science Forum
    Volume
    645-648
    DOI
    https://doi.org/10.4028/www.scientific.net/MSF.645-648.661
    Copyright Statement
    Self-archiving of the author-manuscript version is not yet supported by this journal. Please refer to the journal link for access to the definitive, published version or contact the author[s] for more information.
    Subject
    Physical chemistry
    Microelectronics
    Materials engineering
    Publication URI
    http://hdl.handle.net/10072/36527
    Collection
    • Journal articles

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