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  • Single-Crystalline 3C-SiC anodically Bonded onto Glass: An Excellent Platform for High-Temperature Electronics and Bioapplications

    Author(s)
    Hoang-Phuong, Phan
    Cheng, Han-Hao
    Toan, Dinh
    Wood, Barry
    Tuan-Khoa, Nguyen
    Mu, Fengwen
    Kamble, Harshad
    Vadivelu, Raja
    Walker, Glenn
    Hold, Leonie
    Iacopi, Alan
    Haylock, Ben
    Dzung, Viet Dao
    Lobino, Mirko
    Suga, Tadatomo
    Nam-Trung, Nguyen
    Griffith University Author(s)
    Walker, Glenn M.
    Iacopi, Alan V.
    Hold, Leonie K.
    Haylock, Ben R.
    Dao, Dzung V.
    Lobino, Mirko
    Nguyen, Nam-Trung
    Phan, Hoang Phuong
    Vadivelu, Raja
    Dinh, Toan K.
    Kamble, Harshad C.
    Nguyen Tuan, Khoa
    Year published
    2017
    Metadata
    Show full item record
    Abstract
    Single-crystal cubic silicon carbide has attracted great attention for MEMS and electronic devices. However, current leakage at the SiC/Si junction at high temperatures and visible-light absorption of the Si substrate are main obstacles hindering the use of the platform in a broad range of applications. To solve these bottlenecks, we present a new platform of single crystal SiC on an electrically insulating and transparent substrate using an anodic bonding process. The SiC thin film was prepared on a 150 mm Si with a surface roughness of 7 nm using LPCVD. The SiC/Si wafer was bonded to a glass substrate and then the Si layer ...
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    Single-crystal cubic silicon carbide has attracted great attention for MEMS and electronic devices. However, current leakage at the SiC/Si junction at high temperatures and visible-light absorption of the Si substrate are main obstacles hindering the use of the platform in a broad range of applications. To solve these bottlenecks, we present a new platform of single crystal SiC on an electrically insulating and transparent substrate using an anodic bonding process. The SiC thin film was prepared on a 150 mm Si with a surface roughness of 7 nm using LPCVD. The SiC/Si wafer was bonded to a glass substrate and then the Si layer was completely removed through wafer polishing and wet etching. The bonded SiC/glass samples show a sharp bonding interface of less than 15 nm characterized using deep profile X-ray photoelectron spectroscopy, a strong bonding strength of approximately 20 MPa measured from the pulling test, and relatively high optical transparency in the visible range. The transferred SiC film also exhibited good conductivity and a relatively high temperature coefficient of resistance varying from −12 000 to −20 000 ppm/K, which is desirable for thermal sensors. The biocompatibility of SiC/glass was also confirmed through mouse 3T3 fibroblasts cell-culturing experiments. Taking advantage of the superior electrical properties and biocompatibility of SiC, the developed SiC-on-glass platform offers unprecedented potentials for high-temperature electronics as well as bioapplications.
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    Journal Title
    ACS Applied Materials and Interfaces
    Volume
    9
    DOI
    https://doi.org/10.1021/acsami.7b06661
    Subject
    Physical Chemistry not elsewhere classified
    Chemical Sciences
    Engineering
    Publication URI
    http://hdl.handle.net/10072/368346
    Collection
    • Journal articles

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