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  • Dependence of chemical composition and bonding of amorphous SiC on deposition temperature and the choice of substrate

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    Author(s)
    Wang, Li
    Griffith University Author(s)
    Wang, Li
    Year published
    2011
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    Abstract
    Amorphous SiC has superior mechanical, chemical, electrical, and optical properties which are process dependent. In this study, the impact of deposition temperature and substrate choice on the chemical composition and bonding of deposited amorphous SiC is investigated, both 6 in. single-crystalline Si and oxide covered Si wafers were used as substrates. The deposition was performed in a standard low-pressure chemical vapour deposition reactor, methylsilane was used as the single precursor, and deposition temperature was set at 600 and 650 î XPS analyses were employed to investigate the chemical composition, Si/C ratio, and ...
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    Amorphous SiC has superior mechanical, chemical, electrical, and optical properties which are process dependent. In this study, the impact of deposition temperature and substrate choice on the chemical composition and bonding of deposited amorphous SiC is investigated, both 6 in. single-crystalline Si and oxide covered Si wafers were used as substrates. The deposition was performed in a standard low-pressure chemical vapour deposition reactor, methylsilane was used as the single precursor, and deposition temperature was set at 600 and 650 î XPS analyses were employed to investigate the chemical composition, Si/C ratio, and chemical bonding of deposited amorphous SiC. The results demonstrate that these properties varied with deposition temperature, and the impact of substrate on them became minor when deposition temperature was raised up from 600 àto 650 î Nearly stoichiometric amorphous SiC with higher impurity concentration was deposited on crystalline Si substrate at 600 î Slightly carbon rich amorphous SiC films with much lower impurity concentration were prepared at 650 àon both kinds of substrates. Tetrahedral Si-C bonds were found to be the dominant bonds in all deposited amorphous SiC. No contribution from Si-H/Si-Si but from sp2 and sp3 C-C/C-H bonds was identified.
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    Journal Title
    Journal of Non-Crystalline Solids
    Volume
    357
    Issue
    3
    DOI
    https://doi.org/10.1016/j.jnoncrysol.2010.11.037
    Copyright Statement
    © 2010 Elsevier B.V. This is the author-manuscript version of this paper. Reproduced in accordance with the copyright policy of the publisher. Please refer to the journal's website for access to the definitive, published version.
    Subject
    Condensed matter physics
    Materials engineering
    Compound semiconductors
    Publication URI
    http://hdl.handle.net/10072/37144
    Collection
    • Journal articles

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