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dc.contributor.authorWang, Li
dc.date.accessioned2017-05-03T15:02:42Z
dc.date.available2017-05-03T15:02:42Z
dc.date.issued2011
dc.date.modified2013-05-29T04:06:16Z
dc.identifier.issn0022-3093
dc.identifier.doi10.1016/j.jnoncrysol.2010.11.037
dc.identifier.urihttp://hdl.handle.net/10072/37144
dc.description.abstractAmorphous SiC has superior mechanical, chemical, electrical, and optical properties which are process dependent. In this study, the impact of deposition temperature and substrate choice on the chemical composition and bonding of deposited amorphous SiC is investigated, both 6 in. single-crystalline Si and oxide covered Si wafers were used as substrates. The deposition was performed in a standard low-pressure chemical vapour deposition reactor, methylsilane was used as the single precursor, and deposition temperature was set at 600 and 650 î XPS analyses were employed to investigate the chemical composition, Si/C ratio, and chemical bonding of deposited amorphous SiC. The results demonstrate that these properties varied with deposition temperature, and the impact of substrate on them became minor when deposition temperature was raised up from 600 àto 650 î Nearly stoichiometric amorphous SiC with higher impurity concentration was deposited on crystalline Si substrate at 600 î Slightly carbon rich amorphous SiC films with much lower impurity concentration were prepared at 650 àon both kinds of substrates. Tetrahedral Si-C bonds were found to be the dominant bonds in all deposited amorphous SiC. No contribution from Si-H/Si-Si but from sp2 and sp3 C-C/C-H bonds was identified.
dc.description.peerreviewedYes
dc.description.publicationstatusYes
dc.format.extent126639 bytes
dc.format.mimetypeapplication/pdf
dc.languageEnglish
dc.language.isoeng
dc.publisherElsevier
dc.publisher.placeNetherlands
dc.relation.ispartofstudentpublicationN
dc.relation.ispartofpagefrom1063
dc.relation.ispartofpageto1069
dc.relation.ispartofissue3
dc.relation.ispartofjournalJournal of Non-Crystalline Solids
dc.relation.ispartofvolume357
dc.rights.retentionY
dc.subject.fieldofresearchCondensed matter physics
dc.subject.fieldofresearchMaterials engineering
dc.subject.fieldofresearchCompound semiconductors
dc.subject.fieldofresearchcode5104
dc.subject.fieldofresearchcode4016
dc.subject.fieldofresearchcode401603
dc.titleDependence of chemical composition and bonding of amorphous SiC on deposition temperature and the choice of substrate
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.facultyGriffith Sciences, Griffith School of Engineering
gro.rights.copyright© 2010 Elsevier B.V. This is the author-manuscript version of this paper. Reproduced in accordance with the copyright policy of the publisher. Please refer to the journal's website for access to the definitive, published version.
gro.date.issued2011
gro.hasfulltextFull Text
gro.griffith.authorWang, Li


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