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dc.contributor.authorTeo, Adrian JT
dc.contributor.authorLi, Holden King-Ho
dc.contributor.authorTan, Say Hwa
dc.contributor.authorYoon, Yong-Jin
dc.date.accessioned2019-06-19T13:07:29Z
dc.date.available2019-06-19T13:07:29Z
dc.date.issued2018
dc.identifier.issn0946-7076
dc.identifier.doi10.1007/s00542-017-3370-4
dc.identifier.urihttp://hdl.handle.net/10072/371525
dc.description.abstractWith optimization being vital, the design optimization of a silicon-on-insulator (SOI) micro-opto-electro-mechanical systems accelerometer is discussed in this paper. This process has enabled a simplistic design that employs double-sided deep reactive ion etching (DRIE) on SOI wafer to be able to attain high sensitivity of 294 µW/G with a calculated proof mass displacement of 0.066 µm/G which was close to ANSYS simulated results of 0.061 µm/G. Optimization has also enabled an in-depth study of the effects of the different variables on the overall performance of the device.
dc.description.peerreviewedYes
dc.languageEnglish
dc.language.isoeng
dc.publisherSpringer
dc.publisher.placeGermany
dc.relation.ispartofpagefrom465
dc.relation.ispartofpageto472
dc.relation.ispartofissue1
dc.relation.ispartofjournalMicrosystem Technologies
dc.relation.ispartofvolume24
dc.subject.fieldofresearchNanotechnology not elsewhere classified
dc.subject.fieldofresearchCommunications Technologies
dc.subject.fieldofresearchNanotechnology
dc.subject.fieldofresearchcode100799
dc.subject.fieldofresearchcode1005
dc.subject.fieldofresearchcode1007
dc.titleDesign optimization for an SOI MOEMS accelerometer
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.hasfulltextNo Full Text
gro.griffith.authorTan, Say Hwa H.
gro.griffith.authorTeo, Adrian J.


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