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dc.contributor.authorDinh, Toanen_US
dc.contributor.authorPhan, Hoang Phuongen_US
dc.contributor.authorNguyen Tuan, Khoaen_US
dc.contributor.authorBalakrishnan, Vivekananthanen_US
dc.contributor.authorCheng, Han-Haoen_US
dc.contributor.authorHold, Leonieen_US
dc.contributor.authorIacopi, Alanen_US
dc.contributor.authorNguyen, Nam-Trungen_US
dc.contributor.authorDao, Dungen_US
dc.date.accessioned2019-05-29T12:32:23Z
dc.date.available2019-05-29T12:32:23Z
dc.date.issued2018en_US
dc.identifier.issn0741-3106en_US
dc.identifier.doi10.1109/LED.2018.2808329en_US
dc.identifier.urihttp://hdl.handle.net/10072/372599
dc.description.abstractThere is a growing interest and demand to develop sensors that operate at high temperatures. In this work, we investigate the temperature sensing properties of unintentionally doped n-type single crystalline cubic silicon carbide (SiC) for high temperatures up to 800 K. A highly sensitive temperature sensor was demonstrated with a temperature coefficient of conductivity (TCC) ranging from 1.96×104 to 5.18×104 ppm/K. The application of this material was successfully demonstrated as a hot film flow sensor with its high signal-to-noise response to air flow at elevated temperatures. The high TCC of the single crystalline SiC film at and above 800 K strongly revealed its potential for highly sensitive thermal sensors working at high temperatures.en_US
dc.description.peerreviewedYesen_US
dc.languageEnglishen_US
dc.publisherIEEEen_US
dc.publisher.placeUnited States of Americaen_US
dc.relation.ispartofpagefrom580en_US
dc.relation.ispartofpageto583en_US
dc.relation.ispartofissue4en_US
dc.relation.ispartofjournalIEEE Electron Device Lettersen_US
dc.relation.ispartofvolume39en_US
dc.subject.fieldofresearchMicroelectromechanical Systems (MEMS)en_US
dc.subject.fieldofresearchElectrical and Electronic Engineeringen_US
dc.subject.fieldofresearchcode091306en_US
dc.subject.fieldofresearchcode0906en_US
dc.titleUnintentionally doped epitaxial 3C-SiC (111) nanothin film as material for highly sensitive thermal sensors at high temperaturesen_US
dc.typeJournal articleen_US
dc.type.descriptionC1 - Articlesen_US
dc.type.codeC - Journal Articlesen_US
dc.description.versionPost-printen_US
gro.facultyGriffith Sciences, School of Engineering and Built Environmenten_US
gro.rights.copyright© 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en_US
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