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dc.contributor.authorTanner, Philip
dc.contributor.authorIacopi, Alan
dc.contributor.authorPhan, Hoang-Phuong
dc.contributor.authorDimitrijev, Sima
dc.contributor.authorHold, Leonie
dc.contributor.authorChaik, Kien
dc.contributor.authorWalker, Glenn
dc.contributor.authorDao, Dzung Viet
dc.contributor.authorNguyen, Nam-Trung
dc.date.accessioned2018-04-17T02:10:10Z
dc.date.available2018-04-17T02:10:10Z
dc.date.issued2017
dc.identifier.issn2045-2322
dc.identifier.doi10.1038/s41598-017-17985-9
dc.identifier.urihttp://hdl.handle.net/10072/373295
dc.description.abstractThis work examines the stability of epitaxial 3C-SiC/Si heterojunctions subjected to heat treatments between 1000 °C and 1300 °C. Because of the potential for silicon carbide in high temperature and harsh environment applications, and the economic advantages of growing the 3C-SiC polytype on large diameter silicon wafers, its stability after high temperature processing is an important consideration. Yet recently, this has been thrown into question by claims that the heterojunction suffers catastrophic degradation at temperatures above 1000 °C. Here we present results showing that the heterojunction maintains excellent diode characteristics following heat treatment up to 1100 °C and while some changes were observed between 1100 °C and 1300 °C, diodes maintained their rectifying characteristics, enabling compatibility with a large range of device fabrication. The parameters of as-grown diodes were J0 = 1 × 10−11 A/mm2, n = 1.02, and +/−2V rectification ratio of 9 × 106. Capacitance and thermal current-voltage analysis was used to characterize the excess current leakage mechanism. The change in diode characteristics depends on diode area, with larger areas (1 mm2) having reduced rectification ratio while smaller areas (0.04 mm2) maintained excellent characteristics of J0 = 2 × 10−10 A/mm2, n = 1.28, and +/−2V ratio of 3 × 106. This points to localized defect regions degrading after heat treatment rather than a fundamental issue of the heterojunction.
dc.description.peerreviewedYes
dc.languageEnglish
dc.publisherNature Publishing Group
dc.relation.ispartofpagefrom17734-1
dc.relation.ispartofpageto17734-11
dc.relation.ispartofissue1
dc.relation.ispartofjournalScientific Reports
dc.relation.ispartofvolume7
dc.subject.fieldofresearchEngineering not elsewhere classified
dc.subject.fieldofresearchcode099999
dc.titleExcellent Rectifying Properties of the n-3C-SiC/p-Si Heterojunction Subjected to High Temperature Annealing for Electronics, MEMS, and LED Applications
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
dcterms.licensehttp://creativecommons.org/licenses/by/4.0/
dc.description.versionPublished
gro.facultyGriffith Sciences, School of Engineering and Built Environment
gro.rights.copyright© The Author(s) 2017. This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
gro.hasfulltextFull Text
gro.griffith.authorDimitrijev, Sima
gro.griffith.authorTanner, Philip G.
gro.griffith.authorWalker, Glenn M.
gro.griffith.authorIacopi, Alan V.
gro.griffith.authorHold, Leonie K.
gro.griffith.authorChaik, Kien C.
gro.griffith.authorDao, Dzung V.
gro.griffith.authorNguyen, Nam-Trung
gro.griffith.authorPhan, Hoang Phuong


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