SiC power MOSFETs: The current status and the potential for future development
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This paper reviews the advantages and the current status of commercially available SiC power MOSFETs, followed by an analysis of future trends and the potential for future development. Specifically, the review shows the advantages of the recently commercialized trench MOSFET structure and the potential for integration with SiC Schottky diodes to create fast MOSFETs. The current issues and the potential for future improvements in terms of low channel-carrier mobility and threshold-voltage drifts are also discussed.
Proceedings of the 30th International Conference on Microelectronics (MIEL 2017)
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Microelectronics and Integrated Circuits