SiC power MOSFETs: The current status and the potential for future development
Abstract
This paper reviews the advantages and the current status of commercially available SiC power MOSFETs, followed by an analysis of future trends and the potential for future development. Specifically, the review shows the advantages of the recently commercialized trench MOSFET structure and the potential for integration with SiC Schottky diodes to create fast MOSFETs. The current issues and the potential for future improvements in terms of low channel-carrier mobility and threshold-voltage drifts are also discussed.
Conference Title
2017 IEEE 30TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS (MIEL)
Volume
2017-October
Copyright Statement
© 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Subject
Microelectronics and Integrated Circuits