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  • Pushing the Limits of Piezoresistive Effect by Optomechanical Coupling in 3C-SiC/Si Heterostructure

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    Accepted Manuscript (AM)
    Author(s)
    Foisal, Abu Riduan Md
    Qamar, Afzaal
    Hoang-Phuong, Phan
    Toan, Dinh
    Khoa-Nguyen, Tuan
    Tanner, Philip
    Streed, Erik W
    Dzung, Viet Dao
    Griffith University Author(s)
    Tanner, Philip G.
    Streed, Erik
    Dao, Dzung V.
    Qamar, Afzaal
    Phan, Hoang Phuong
    Dinh, Toan K.
    Nguyen Tuan, Khoa
    Md Foisal, Abu R.
    Year published
    2017
    Metadata
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    Abstract
    This letter reports a giant opto-piezoresistive effect in p-3C-SiC/p-Si heterostructure under visible-light illumination. The p-3C-SiC/p-Si heterostructure has been fabricated by growing a 390 nm p-type 3C-SiC on a p-type Si substrate using the low pressure chemical vapor deposition (LPCVD) technique. The gauge factor of the heterostructure was found to be 28 under a dark condition; however, it significantly increased to about −455 under illumination of 635 nm wavelength at 3.0 mW/cm2. This gauge factor is over 200 times higher than that of commercial metal strain gauge, 16 times higher than that of 3C-SiC thinfilm, and ...
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    This letter reports a giant opto-piezoresistive effect in p-3C-SiC/p-Si heterostructure under visible-light illumination. The p-3C-SiC/p-Si heterostructure has been fabricated by growing a 390 nm p-type 3C-SiC on a p-type Si substrate using the low pressure chemical vapor deposition (LPCVD) technique. The gauge factor of the heterostructure was found to be 28 under a dark condition; however, it significantly increased to about −455 under illumination of 635 nm wavelength at 3.0 mW/cm2. This gauge factor is over 200 times higher than that of commercial metal strain gauge, 16 times higher than that of 3C-SiC thinfilm, and approximately 5 times larger than that of bulk Si. This enhancement of the gauge factor was attributed to the opto-mechanical coupling effect in p-3C-SiC/p-Si heterostructure. The opto-mechanical coupling effect is the amplified effect of the photoconductivity enhancement and strain-induced band structure modification in the p-type Si substrate. These findings enable extremely high sensitive and robust mechanical sensors, as well as optical sensors at low cost, as no complicated nanofabrication process is required.
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    Journal Title
    ACS Applied Materials & Interfaces
    Volume
    9
    Issue
    46
    DOI
    https://doi.org/10.1021/acsami.7b12128
    Copyright Statement
    This document is the Postprint: Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, © 2017 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see 10.1021/acsami.7b12128
    Subject
    Chemical sciences
    Other chemical sciences not elsewhere classified
    Engineering
    Publication URI
    http://hdl.handle.net/10072/373651
    Collection
    • Journal articles

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