dc.contributor.author | Foisal, Abu Riduan Md | |
dc.contributor.author | Qamar, Afzaal | |
dc.contributor.author | Hoang-Phuong, Phan | |
dc.contributor.author | Toan, Dinh | |
dc.contributor.author | Khoa-Nguyen, Tuan | |
dc.contributor.author | Tanner, Philip | |
dc.contributor.author | Streed, Erik W | |
dc.contributor.author | Dzung, Viet Dao | |
dc.date.accessioned | 2019-02-19T01:57:03Z | |
dc.date.available | 2019-02-19T01:57:03Z | |
dc.date.issued | 2017 | |
dc.identifier.issn | 1944-8244 | |
dc.identifier.doi | 10.1021/acsami.7b12128 | |
dc.identifier.uri | http://hdl.handle.net/10072/373651 | |
dc.description.abstract | This letter reports a giant opto-piezoresistive effect in p-3C-SiC/p-Si heterostructure under visible-light illumination. The p-3C-SiC/p-Si heterostructure has been fabricated by growing a 390 nm p-type 3C-SiC on a p-type Si substrate using the low pressure chemical vapor deposition (LPCVD) technique. The gauge factor of the heterostructure was found to be 28 under a dark condition; however, it significantly increased to about −455 under illumination of 635 nm wavelength at 3.0 mW/cm2. This gauge factor is over 200 times higher than that of commercial metal strain gauge, 16 times higher than that of 3C-SiC thinfilm, and approximately 5 times larger than that of bulk Si. This enhancement of the gauge factor was attributed to the opto-mechanical coupling effect in p-3C-SiC/p-Si heterostructure. The opto-mechanical coupling effect is the amplified effect of the photoconductivity enhancement and strain-induced band structure modification in the p-type Si substrate. These findings enable extremely high sensitive and robust mechanical sensors, as well as optical sensors at low cost, as no complicated nanofabrication process is required. | |
dc.description.peerreviewed | Yes | |
dc.language | English | |
dc.language.iso | eng | |
dc.publisher | American Chemical Society | |
dc.relation.ispartofpagefrom | 39921 | |
dc.relation.ispartofpageto | 39925 | |
dc.relation.ispartofissue | 46 | |
dc.relation.ispartofjournal | ACS Applied Materials & Interfaces | |
dc.relation.ispartofvolume | 9 | |
dc.subject.fieldofresearch | Microelectromechanical systems (MEMS) | |
dc.subject.fieldofresearch | Electronic sensors | |
dc.subject.fieldofresearch | Physical sciences | |
dc.subject.fieldofresearch | Chemical sciences | |
dc.subject.fieldofresearch | Engineering | |
dc.subject.fieldofresearchcode | 401705 | |
dc.subject.fieldofresearchcode | 400906 | |
dc.subject.fieldofresearchcode | 51 | |
dc.subject.fieldofresearchcode | 34 | |
dc.subject.fieldofresearchcode | 40 | |
dc.title | Pushing the Limits of Piezoresistive Effect by Optomechanical Coupling in 3C-SiC/Si Heterostructure | |
dc.type | Journal article | |
dc.type.description | C1 - Articles | |
dc.type.code | C - Journal Articles | |
dc.description.version | Accepted Manuscript (AM) | |
gro.faculty | Griffith Sciences, School of Engineering and Built Environment | |
gro.rights.copyright | This document is the Postprint: Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, © 2017 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see 10.1021/acsami.7b12128 | |
gro.hasfulltext | Full Text | |
gro.griffith.author | Tanner, Philip G. | |
gro.griffith.author | Streed, Erik | |
gro.griffith.author | Dao, Dzung V. | |
gro.griffith.author | Nguyen, Khoa T. | |