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dc.contributor.authorFoisal, Abu Riduan Md
dc.contributor.authorQamar, Afzaal
dc.contributor.authorHoang-Phuong, Phan
dc.contributor.authorToan, Dinh
dc.contributor.authorKhoa-Nguyen, Tuan
dc.contributor.authorTanner, Philip
dc.contributor.authorStreed, Erik W
dc.contributor.authorDzung, Viet Dao
dc.date.accessioned2019-02-19T01:57:03Z
dc.date.available2019-02-19T01:57:03Z
dc.date.issued2017
dc.identifier.issn1944-8244
dc.identifier.doi10.1021/acsami.7b12128
dc.identifier.urihttp://hdl.handle.net/10072/373651
dc.description.abstractThis letter reports a giant opto-piezoresistive effect in p-3C-SiC/p-Si heterostructure under visible-light illumination. The p-3C-SiC/p-Si heterostructure has been fabricated by growing a 390 nm p-type 3C-SiC on a p-type Si substrate using the low pressure chemical vapor deposition (LPCVD) technique. The gauge factor of the heterostructure was found to be 28 under a dark condition; however, it significantly increased to about −455 under illumination of 635 nm wavelength at 3.0 mW/cm2. This gauge factor is over 200 times higher than that of commercial metal strain gauge, 16 times higher than that of 3C-SiC thinfilm, and approximately 5 times larger than that of bulk Si. This enhancement of the gauge factor was attributed to the opto-mechanical coupling effect in p-3C-SiC/p-Si heterostructure. The opto-mechanical coupling effect is the amplified effect of the photoconductivity enhancement and strain-induced band structure modification in the p-type Si substrate. These findings enable extremely high sensitive and robust mechanical sensors, as well as optical sensors at low cost, as no complicated nanofabrication process is required.
dc.description.peerreviewedYes
dc.languageEnglish
dc.language.isoeng
dc.publisherAmerican Chemical Society
dc.relation.ispartofpagefrom39921
dc.relation.ispartofpageto39925
dc.relation.ispartofissue46
dc.relation.ispartofjournalACS Applied Materials & Interfaces
dc.relation.ispartofvolume9
dc.subject.fieldofresearchMicroelectromechanical systems (MEMS)
dc.subject.fieldofresearchElectronic sensors
dc.subject.fieldofresearchPhysical sciences
dc.subject.fieldofresearchChemical sciences
dc.subject.fieldofresearchEngineering
dc.subject.fieldofresearchcode401705
dc.subject.fieldofresearchcode400906
dc.subject.fieldofresearchcode51
dc.subject.fieldofresearchcode34
dc.subject.fieldofresearchcode40
dc.titlePushing the Limits of Piezoresistive Effect by Optomechanical Coupling in 3C-SiC/Si Heterostructure
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
dc.description.versionAccepted Manuscript (AM)
gro.facultyGriffith Sciences, School of Engineering and Built Environment
gro.rights.copyrightThis document is the Postprint: Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, © 2017 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see 10.1021/acsami.7b12128
gro.hasfulltextFull Text
gro.griffith.authorTanner, Philip G.
gro.griffith.authorStreed, Erik
gro.griffith.authorDao, Dzung V.
gro.griffith.authorNguyen, Khoa T.


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