Zinc sulfide nanowire arrays on silicon wafers for field emitters
Author(s)
Chen, Zhi-Gang
Cheng, Lina
Zou, Jin
Yao, Xiangdong
Lu, Gao Qing Max
Cheng, Hui-Ming
Griffith University Author(s)
Year published
2010
Metadata
Show full item recordAbstract
Wurtzite structured zinc sulfide (ZnS) nanowire arrays are synthesized on silicon (111) wafers by a facile evaporation-condensation approach. These ZnS nanowire arrays possess predominant field emission properties with a low turn-on field of 2.9 V mu m(-1), a low threshold field of 4.25 V mu m(-1), a high field-enhancement factor (over 2700), and a high stability with a low fluctuation (similar to 0.8%). The improved field emission performance of these ZnS nanowire arrays is attributed to their specific crystallographic feature-array structures with nanotips and high single crystallinity. These results suggest that such ZnS ...
View more >Wurtzite structured zinc sulfide (ZnS) nanowire arrays are synthesized on silicon (111) wafers by a facile evaporation-condensation approach. These ZnS nanowire arrays possess predominant field emission properties with a low turn-on field of 2.9 V mu m(-1), a low threshold field of 4.25 V mu m(-1), a high field-enhancement factor (over 2700), and a high stability with a low fluctuation (similar to 0.8%). The improved field emission performance of these ZnS nanowire arrays is attributed to their specific crystallographic feature-array structures with nanotips and high single crystallinity. These results suggest that such ZnS nanowire arrays can be used as building blocks for field emitters.
View less >
View more >Wurtzite structured zinc sulfide (ZnS) nanowire arrays are synthesized on silicon (111) wafers by a facile evaporation-condensation approach. These ZnS nanowire arrays possess predominant field emission properties with a low turn-on field of 2.9 V mu m(-1), a low threshold field of 4.25 V mu m(-1), a high field-enhancement factor (over 2700), and a high stability with a low fluctuation (similar to 0.8%). The improved field emission performance of these ZnS nanowire arrays is attributed to their specific crystallographic feature-array structures with nanotips and high single crystallinity. These results suggest that such ZnS nanowire arrays can be used as building blocks for field emitters.
View less >
Journal Title
Nanotechnology
Volume
21
Issue
6
Subject
Solid state chemistry
Physical properties of materials