Consequences of NO thermal treatments in the properties of dielectric films / SiC structures
Author(s)
Stedile, FC
Correa, SA
Radtke, C
Miotti, L
Baumvol, IJR
Soares, GV
Kong, F
Han, J
Hold, L
Dimitrijev, S
Griffith University Author(s)
Year published
2010
Metadata
Show full item recordAbstract
The consequences of thermal treatments in nitric oxide atmospheres on the characteristics of dielectric films / SiC structures was investigated by high-frequency capacitance-voltage measurements, X-ray photoelectron spectroscopy, and X-ray reflectometry techniques. It was observed that nitrogen incorporation in dielectric films / SiC structures leads to the formation of a thinner interfacial layer that contains carbon. This fact was related to the improvement of electrical properties of those structures.The consequences of thermal treatments in nitric oxide atmospheres on the characteristics of dielectric films / SiC structures was investigated by high-frequency capacitance-voltage measurements, X-ray photoelectron spectroscopy, and X-ray reflectometry techniques. It was observed that nitrogen incorporation in dielectric films / SiC structures leads to the formation of a thinner interfacial layer that contains carbon. This fact was related to the improvement of electrical properties of those structures.
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Journal Title
Materials Science Forum
Volume
645-648
Copyright Statement
Self-archiving of the author-manuscript version is not yet supported by this journal. Please refer to the journal link for access to the definitive, published version or contact the author[s] for more information.
Subject
Physical chemistry
Microelectronics
Materials engineering