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  • Consequences of NO thermal treatments in the properties of dielectric films / SiC structures

    Author(s)
    Stedile, FC
    Correa, SA
    Radtke, C
    Miotti, L
    Baumvol, IJR
    Soares, GV
    Kong, F
    Han, J
    Hold, L
    Dimitrijev, S
    Griffith University Author(s)
    Dimitrijev, Sima
    Year published
    2010
    Metadata
    Show full item record
    Abstract
    The consequences of thermal treatments in nitric oxide atmospheres on the characteristics of dielectric films / SiC structures was investigated by high-frequency capacitance-voltage measurements, X-ray photoelectron spectroscopy, and X-ray reflectometry techniques. It was observed that nitrogen incorporation in dielectric films / SiC structures leads to the formation of a thinner interfacial layer that contains carbon. This fact was related to the improvement of electrical properties of those structures.The consequences of thermal treatments in nitric oxide atmospheres on the characteristics of dielectric films / SiC structures was investigated by high-frequency capacitance-voltage measurements, X-ray photoelectron spectroscopy, and X-ray reflectometry techniques. It was observed that nitrogen incorporation in dielectric films / SiC structures leads to the formation of a thinner interfacial layer that contains carbon. This fact was related to the improvement of electrical properties of those structures.
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    Journal Title
    Materials Science Forum
    Volume
    645-648
    DOI
    https://doi.org/10.4028/www.scientific.net/MSF.645-648.689
    Copyright Statement
    Self-archiving of the author-manuscript version is not yet supported by this journal. Please refer to the journal link for access to the definitive, published version or contact the author[s] for more information.
    Subject
    Physical chemistry
    Microelectronics
    Materials engineering
    Publication URI
    http://hdl.handle.net/10072/37701
    Collection
    • Journal articles

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