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dc.contributor.authorShrestha, Neelu
dc.contributor.authorKibel, Martyn H
dc.contributor.authorLeech, Patrick W
dc.contributor.authorHolland, Anthony S
dc.contributor.authorReeves, Geoffrey K
dc.contributor.authorRidgway, Mark C
dc.contributor.authorTanner, Phillip
dc.date.accessioned2018-07-09T02:14:21Z
dc.date.available2018-07-09T02:14:21Z
dc.date.issued2017
dc.identifier.issn2059-8521
dc.identifier.doi10.1557/adv.2017.314
dc.identifier.urihttp://hdl.handle.net/10072/378279
dc.description.abstractThe electrical characteristics of Au/Ni/Ti/ n-SiC contacts have been examined as a function of implant dose (1013-1014 ions/cm2) at 5 KeV and temperature of annealing (750-1000 °C). Measurements of specific contact resistance, ρc, were approximately constant at lower implant doses until increasing at 1 x 1015 ions/cm2 for both C and P ions. Annealing at a temperature of 1000 °C has reduced the value of ρc by an order of magnitude to ∼1 x 10-6 Ω.cm2 at implant doses of 1013-1014 ions/cm2. Auger Electron Spectroscopy (AES) has shown that annealing at 1000 °C resulted in a strong indiffusion of the metallization layers at the interface.
dc.description.peerreviewedYes
dc.languageEnglish
dc.language.isoeng
dc.publisherCambridge University Press
dc.relation.ispartofpagefrom2903
dc.relation.ispartofpageto2908
dc.relation.ispartofissue51
dc.relation.ispartofjournalMRS Advances
dc.relation.ispartofvolume2
dc.subject.fieldofresearchMaterials Engineering not elsewhere classified
dc.subject.fieldofresearchcode091299
dc.titleLow Energy Ion Implantation and Annealing of Au/Ni/Ti Contacts to n-SiC
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
dc.description.versionVersion of Record (VoR)
gro.rights.copyright© 2017 Materials Research Society. The attached file is reproduced here in accordance with the copyright policy of the publisher. Please refer to the journal's website for access to the definitive, published version.
gro.hasfulltextFull Text
gro.griffith.authorTanner, Philip G.


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