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dc.contributor.authorMishra, Neerajen_US
dc.contributor.authorBoeckl, Johnen_US
dc.contributor.authorMotta, Nunzioen_US
dc.contributor.authorIacopi, F.en_US
dc.contributor.editorNunzio Motta, Francesca Iacopi, Camilla Colettien_US
dc.date.accessioned2018-10-23T12:31:20Z
dc.date.available2018-10-23T12:31:20Z
dc.date.issued2017en_US
dc.identifier.isbn9781351736251en_US
dc.identifier.doi10.1201/9781315186153en_US
dc.identifier.urihttp://hdl.handle.net/10072/378304
dc.description.abstractn the past decade, fundamental graphene research has indicated several excellent electronic properties for graphene, such as ultrahigh carrier mobility (~200,000 cm2/V·s), micrometer-scale mean free path, electron–hole symmetry, and quantum Hall effect [1–6]. Such extraordinary properties, unmatched by any other conventional thin-film material, make it an extremely promising material for next-generation nanointegrated devices. Despite this, several fundamental challenges still lie ahead, before the introduction of graphene in nanodevices can be envisaged. One major challenge is the ability to confirm the outstanding reported properties for graphene grown over large areas onto appropriate substrates. Since graphene was isolated the first time, in 2004 [7], several techniques have been demonstrated to produce high-quality graphene. The most common techniques are micromechanical exfoliation of single-crystal graphite, chemical vapor deposition (CVD) growth on transition metals and dielectric insulators, chemical reduction of graphite oxide (GO), carbon nanotube (CNT) unzipping, and high-temperature thermal decomposition of silicon carbide (SiC) [7–15]. Among these methods, the highest-performance graphene devices have been fabricated using mechanically exfoliated flakes. Carrier mobility in excess of ~200,000 cm2/V·s has been reported for suspended single-layer exfoliated graphene at room temperature [6, 16]. CVD growth is widely used to produce large-area (up to 30 inches) high-quality graphene on transition metal substrates [12].en_US
dc.description.peerreviewedYesen_US
dc.languageEnglishen_US
dc.publisherPan Stanford Publishingen_US
dc.publisher.placeUnited Statesen_US
dc.publisher.urihttps://www.taylorfrancis.com/books/e/9781351736251/chapters/10.1201%2F9781315186153-1en_US
dc.relation.ispartofbooktitleGrowing Graphene on Semiconductorsen_US
dc.relation.ispartofchapter1en_US
dc.relation.ispartofpagefrom1en_US
dc.relation.ispartofpageto26en_US
dc.subject.fieldofresearchEnvironmental Sciences not elsewhere classifieden_US
dc.subject.fieldofresearchcode059999en_US
dc.titleThe Significance and Challenges of Direct Growth of Graphene on Semiconductor Surfacesen_US
dc.typeBook chapteren_US
dc.type.descriptionB1 - Book Chapters (HERDC)en_US
dc.type.codeB - Book Chaptersen_US
gro.facultyGriffith Sciences, School of Environment and Scienceen_US
gro.hasfulltextNo Full Text
gro.griffith.authorMishra, Neeraj


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