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dc.contributor.authorTang, Xiao-yan
dc.contributor.authorLi, Baikui
dc.contributor.authorChen, Kevin
dc.contributor.authorWang, Jiannong
dc.date.accessioned2019-05-29T13:03:34Z
dc.date.available2019-05-29T13:03:34Z
dc.date.issued2018
dc.identifier.issn1882-0778
dc.identifier.doi10.7567/APEX.11.054101
dc.identifier.urihttp://hdl.handle.net/10072/379841
dc.description.abstractThe photocurrent characteristics of metal–AlGaN/GaN Schottky-on-heterojunction diodes were investigated. When the photon energy of incident light was larger than the bandgap of GaN but smaller than that of AlGaN, the alternating-current (ac) photocurrent measured using lock-in techniques increased with the chopper frequency. Analyzing the generation and flow processes of photocarriers revealed that the photocurrent induced by GaN interband excitation featured a transient behavior, and its direction reversed when the light excitation was removed. The abnormal dependence of the measured ac photocurrent magnitude on the chopper frequency was explained considering the detection principles of a lock-in amplifier.
dc.description.peerreviewedYes
dc.languageEnglish
dc.language.isoeng
dc.publisherInstitute of Physics Publishing Ltd.
dc.publisher.placeUnited Kingdom
dc.relation.ispartofchapter54101
dc.relation.ispartofpagefrom1
dc.relation.ispartofpageto4
dc.relation.ispartofissue5
dc.relation.ispartofjournalApplied Physics Express
dc.relation.ispartofvolume11
dc.subject.fieldofresearchPhysical sciences
dc.subject.fieldofresearchOther physical sciences not elsewhere classified
dc.subject.fieldofresearchcode51
dc.subject.fieldofresearchcode519999
dc.titlePhotocurrent characteristics of metal-AlGaN/GaN Schottky-on-heterojunction diodes induced by GaN interband excitation
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.facultyGriffith Sciences, Queensland Micro and Nanotechnology Centre
gro.hasfulltextNo Full Text
gro.griffith.authorTang, Xiao-yan


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