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dc.contributor.authorCheng, EM
dc.contributor.authorMohd Nasir, NF
dc.contributor.authorShahriman, AB
dc.contributor.authorBaharuddin, SA
dc.contributor.authorAbdul Majid, MS
dc.contributor.authorLeech, PW
dc.contributor.authorTanner, P
dc.contributor.authorHolland, AS
dc.description.abstractElectronic devices may produce undesirable electromagnetic (EM) interference which can degrade the system performance and also affect human health. In this paper, the potential property of 3C-Silicon Carbide (3C-SiC) as the microwave absorbing material is investigated. The reflection coefficient, Г of 3C-SiC has been measured using an open-ended coaxial sensor. The substrates consisted of films of 3C-SiC of two different thicknesses (0.265µm and 0.285µm) with both polished and unpolished surfaces. The measurements were taken in the frequency range within 1.4 GHz to 18.8 GHz at room temperature. A continuous decrease in the reflection coefficient was measured in 3C-SiC as the frequency increased to 18.8GHz. The results have shown that the rougher surface of unpolished 3C-SiC of 0.285µm thickness could be applied as microwave absorbing material.
dc.publisherUniversiti Teknikal Malaysia Melaka
dc.relation.ispartofjournalJournal of Telecommunication, Electronic and Computer Engineering
dc.subject.fieldofresearchElectronics, sensors and digital hardware not elsewhere classified
dc.titleElectromagnetic interference (EMI) analysis on surface roughness of 3c-silicon carbide (3C-SiC) deposited on silicon (Si) substrate
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.hasfulltextNo Full Text
gro.griffith.authorTanner, Philip G.

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