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dc.contributor.authorFoisal, Abu Riduan Md
dc.contributor.authorHoang-Phuong, Phan
dc.contributor.authorToan, Dinh
dc.contributor.authorTuan-Khoa, Nguyen
dc.contributor.authorNam-Trung, Nguyen
dc.contributor.authorDzung, Viet Dao
dc.date.accessioned2019-05-29T12:39:49Z
dc.date.available2019-05-29T12:39:49Z
dc.date.issued2018
dc.identifier.issn2046-2069
dc.identifier.doi10.1039/C8RA00734A
dc.identifier.urihttp://hdl.handle.net/10072/381402
dc.description.abstractThis paper presents a simple, rapid and cost-effective wire bonding technique for single crystalline silicon carbide (3C–SiC) MEMS devices. Utilizing direct ultrasonic wedge–wedge bonding, we have demonstrated for the first time the direct bonding of aluminum wires onto SiC films for the characterization of electronic devices without the requirement for any metal deposition and etching process. The bonded joints between the Al wires and the SiC surfaces showed a relatively strong adhesion force up to approximately 12.6–14.5 mN and excellent ohmic contact. The bonded wire can withstand high temperatures above 420 K, while maintaining a notable ohmic contact. As a proof of concept, a 3C–SiC strain sensor was demonstrated, where the sensing element was developed based on the piezoresistive effect in SiC and the electrical contact was formed by the proposed direct-bonding technique. The SiC strain sensor possesses high sensitivity to the applied mechanical strains, as well as exceptional repeatability. The work reported here indicates the potential of an extremely simple direct wire bonding method for SiC for MEMS and microelectronic applications.
dc.description.peerreviewedYes
dc.languageEnglish
dc.publisherRoyal Society of Chemistry
dc.publisher.placeUnited Kingdom
dc.relation.ispartofpagefrom15310
dc.relation.ispartofpageto15314
dc.relation.ispartofjournalRSC Advances
dc.relation.ispartofvolume8
dc.subject.fieldofresearchChemical Sciences not elsewhere classified
dc.subject.fieldofresearchChemical Sciences
dc.subject.fieldofresearchcode039999
dc.subject.fieldofresearchcode03
dc.titleA rapid and cost-effective metallization technique for 3C-SiC MEMS using direct wire bonding
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
dcterms.licensehttp://creativecommons.org/licenses/by-nc/3.0/
dc.description.versionPublished
gro.facultyGriffith Sciences, School of Engineering and Built Environment
gro.rights.copyright© 2018 The Author(s). This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence, which permits unrestricted, non-commercial use, distribution and reproduction in any medium, providing that the work is properly cited.
gro.hasfulltextFull Text
gro.griffith.authorDao, Dzung V.
gro.griffith.authorNguyen, Nam-Trung
gro.griffith.authorPhan, Hoang Phuong
gro.griffith.authorDinh, Toan K.
gro.griffith.authorNguyen Tuan, Khoa
gro.griffith.authorMd Foisal, Abu R.


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