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dc.contributor.authorTuan-Khoa, Nguyen
dc.contributor.authorHoang-Phuong, Phan
dc.contributor.authorToan, Dinh
dc.contributor.authorToriyama, Toshiyuki
dc.contributor.authorNakamura, Koichi
dc.contributor.authorFoisal, Abu Riduan Md
dc.contributor.authorNam-Trung, Nguyen
dc.contributor.authorDzung, Viet Dao
dc.date.accessioned2019-05-29T12:40:57Z
dc.date.available2019-05-29T12:40:57Z
dc.date.issued2018
dc.identifier.issn0003-6951
dc.identifier.doi10.1063/1.5037545
dc.identifier.urihttp://hdl.handle.net/10072/381854
dc.description.abstractIn this work, the isotropic piezoresistance in the (0001) plane of p-type 4H-SiC was discovered by means of the hole energy shift calculation and the coordinate transformation. These results were also confirmed by the measurement of the piezoresistance using a bending beam method. The fundamental longitudinal and transverse piezoresistive coefficients p11 and p12 were found to be 6.43 1011Pa1 and 5.12 1011Pa1 , respectively. The isotropy of the piezoresistance in the basal plane of p-type 4H-SiC is attributed to the isotropic hole energy shift under uniaxial strain. This interesting phenomenon in p-type 4H-SiC is promising for the design and fabrication of mechanical sensors and strain-engineered electronics since high sensitivity and consistent performance can be achieved regardless of the crystallographic orientation.
dc.description.peerreviewedYes
dc.languageEnglish
dc.language.isoeng
dc.publisherA I P Publishing
dc.publisher.placeUnited States
dc.relation.ispartofchapter12104
dc.relation.ispartofpagefrom1
dc.relation.ispartofpageto5
dc.relation.ispartofissue1
dc.relation.ispartofjournalApplied Physics Letters
dc.relation.ispartofvolume113
dc.subject.fieldofresearchPhysical sciences
dc.subject.fieldofresearchEngineering
dc.subject.fieldofresearchMicroelectromechanical systems (MEMS)
dc.subject.fieldofresearchMaterials engineering
dc.subject.fieldofresearchcode51
dc.subject.fieldofresearchcode40
dc.subject.fieldofresearchcode401705
dc.subject.fieldofresearchcode4016
dc.subject.keywordsIsotropic piezoresistance
dc.subject.keywordsBending beam method
dc.subject.keywordsUniaxial strain
dc.subject.keywordsMechanical sensors
dc.subject.keywordsStrain-engineered electronics
dc.titleIsotropic piezoresistance of p-type 4H-SiC in (0001) plane
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.facultyGriffith Sciences, School of Engineering and Built Environment
gro.hasfulltextNo Full Text
gro.griffith.authorDao, Dzung V.
gro.griffith.authorNguyen, Nam-Trung
gro.griffith.authorNguyen, Khoa T.


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