dc.contributor.author | Tuan-Khoa, Nguyen | |
dc.contributor.author | Hoang-Phuong, Phan | |
dc.contributor.author | Toan, Dinh | |
dc.contributor.author | Toriyama, Toshiyuki | |
dc.contributor.author | Nakamura, Koichi | |
dc.contributor.author | Foisal, Abu Riduan Md | |
dc.contributor.author | Nam-Trung, Nguyen | |
dc.contributor.author | Dzung, Viet Dao | |
dc.date.accessioned | 2019-05-29T12:40:57Z | |
dc.date.available | 2019-05-29T12:40:57Z | |
dc.date.issued | 2018 | |
dc.identifier.issn | 0003-6951 | |
dc.identifier.doi | 10.1063/1.5037545 | |
dc.identifier.uri | http://hdl.handle.net/10072/381854 | |
dc.description.abstract | In this work, the isotropic piezoresistance in the (0001) plane of p-type 4H-SiC was discovered by
means of the hole energy shift calculation and the coordinate transformation. These results were
also confirmed by the measurement of the piezoresistance using a bending beam method. The fundamental longitudinal and transverse piezoresistive coefficients p11 and p12 were found to be
6.43 1011Pa1 and 5.12 1011Pa1
, respectively. The isotropy of the piezoresistance in the
basal plane of p-type 4H-SiC is attributed to the isotropic hole energy shift under uniaxial strain.
This interesting phenomenon in p-type 4H-SiC is promising for the design and fabrication of
mechanical sensors and strain-engineered electronics since high sensitivity and consistent performance can be achieved regardless of the crystallographic orientation. | |
dc.description.peerreviewed | Yes | |
dc.language | English | |
dc.language.iso | eng | |
dc.publisher | A I P Publishing | |
dc.publisher.place | United States | |
dc.relation.ispartofchapter | 12104 | |
dc.relation.ispartofpagefrom | 1 | |
dc.relation.ispartofpageto | 5 | |
dc.relation.ispartofissue | 1 | |
dc.relation.ispartofjournal | Applied Physics Letters | |
dc.relation.ispartofvolume | 113 | |
dc.subject.fieldofresearch | Physical sciences | |
dc.subject.fieldofresearch | Engineering | |
dc.subject.fieldofresearch | Microelectromechanical systems (MEMS) | |
dc.subject.fieldofresearch | Materials engineering | |
dc.subject.fieldofresearchcode | 51 | |
dc.subject.fieldofresearchcode | 40 | |
dc.subject.fieldofresearchcode | 401705 | |
dc.subject.fieldofresearchcode | 4016 | |
dc.subject.keywords | Isotropic piezoresistance | |
dc.subject.keywords | Bending beam method | |
dc.subject.keywords | Uniaxial strain | |
dc.subject.keywords | Mechanical sensors | |
dc.subject.keywords | Strain-engineered electronics | |
dc.title | Isotropic piezoresistance of p-type 4H-SiC in (0001) plane | |
dc.type | Journal article | |
dc.type.description | C1 - Articles | |
dc.type.code | C - Journal Articles | |
gro.faculty | Griffith Sciences, School of Engineering and Built Environment | |
gro.hasfulltext | No Full Text | |
gro.griffith.author | Dao, Dzung V. | |
gro.griffith.author | Nguyen, Nam-Trung | |
gro.griffith.author | Nguyen, Khoa T. | |