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dc.contributor.authorNguyen, Tuan-Khoa
dc.contributor.authorPhan, Hoang-Phuong
dc.contributor.authorHan, Jisheng
dc.contributor.authorDinh, Toan
dc.contributor.authorFoisal, Abu Riduan Md
dc.contributor.authorDimitrijev, Sima
dc.contributor.authorZhu, Yong
dc.contributor.authorNguyen, Nam-Trung
dc.contributor.authorDao, Dzung Viet
dc.date.accessioned2019-07-04T12:32:31Z
dc.date.available2019-07-04T12:32:31Z
dc.date.issued2018
dc.identifier.issn2046-2069
dc.identifier.doi10.1039/c7ra11922d
dc.identifier.urihttp://hdl.handle.net/10072/381857
dc.description.abstractThis paper presents for the first time a p-type 4H silicon carbide (4H-SiC) van der Pauw strain sensor by utilizing the strain induced effect in four-terminal devices. The sensor was fabricated from a 4H-SiC (0001) wafer, using a 1 μm thick p-type epilayer with a concentration of 1018 cm−3. Taking advantage of the four-terminal configuration, the sensor can eliminate the need for resistance-to-voltage conversion which is typically required for two-terminal devices. The van der Pauw sensor also exhibits an excellent repeatability and linearity with a significantly large output voltage in induced strain ranging from 0 to 334 ppm. Various sensors aligned in different orientations were measured and a high sensitivity of 26.3 ppm−1 was obtained. Combining these performances with the excellent mechanical strength, electrical conductivity, thermal stability, and chemical inertness of 4H-SiC, the proposed sensor is promising for strain monitoring in harsh environments.
dc.description.peerreviewedYes
dc.languageEnglish
dc.language.isoeng
dc.publisherRoyal Society of Chemistry
dc.publisher.placeUnited Kingdom
dc.relation.ispartofpagefrom3009
dc.relation.ispartofpageto3013
dc.relation.ispartofissue6
dc.relation.ispartofjournalRSC Advances
dc.relation.ispartofvolume8
dc.subject.fieldofresearchMicroelectromechanical systems (MEMS)
dc.subject.fieldofresearchPhysical sciences
dc.subject.fieldofresearchNanomaterials
dc.subject.fieldofresearchChemical sciences
dc.subject.fieldofresearchcode401705
dc.subject.fieldofresearchcode51
dc.subject.fieldofresearchcode401807
dc.subject.fieldofresearchcode34
dc.subject.keywordsSilicon carbide
dc.subject.keywordsStrain sensor
dc.subject.keywordsResistance-to-voltage conversion
dc.subject.keywordsTwo-terminal devices
dc.subject.keywordsMechanical strength
dc.subject.keywordsElectrical conductivity
dc.subject.keywordsThermal stability
dc.subject.keywordsChemical inertness
dc.titleHighly sensitive p-type 4H-SiC Van der Pauw sensor
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.facultyGriffith Sciences, School of Engineering and Built Environment
gro.hasfulltextNo Full Text
gro.griffith.authorDimitrijev, Sima
gro.griffith.authorZhu, Yong
gro.griffith.authorDao, Dzung V.
gro.griffith.authorNguyen, Nam-Trung
gro.griffith.authorNguyen, Khoa T.


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