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dc.contributor.authorToan, Dinh
dc.contributor.authorTuan-Khoa, Nguyen
dc.contributor.authorHoang-Phuong, Phan
dc.contributor.authorQuan, Nguyen
dc.contributor.authorHan, Jisheng
dc.contributor.authorDimitrijev, Sima
dc.contributor.authorNam-Trung, Nguyen
dc.contributor.authorDzung, Viet Dao
dc.date.accessioned2019-05-29T12:41:44Z
dc.date.available2019-05-29T12:41:44Z
dc.date.issued2019
dc.identifier.issn1438-1656
dc.identifier.doi10.1002/adem.201801049
dc.identifier.urihttp://hdl.handle.net/10072/382096
dc.description.abstractThere is an increasing demand for the development and integration of multifunctional sensing modules into power electronic devices that can operate in high temperature environments. Here, the authors demonstrate the tunable thermoresistance of p‐type 4H–SiC for a wide temperature range from the room temperature to above 800 K with integrated flow sensing functionality into a single power electronic chip. The electrical resistance of p‐type 4H–SiC is found to exponentially decrease with increasing temperature to a threshold temperature of 536 K. The temperature coefficient of resistance (TCR) shows a large and negative value from −2100 to −7600 ppm K−1, corresponding to a thermal index of 625 K. From the threshold temperature of 536–846 K, the electrical resistance shows excellent linearity with a positive TCR value of 900 ppm K−1. The authors successfully demonstrate the integration of p–4H–SiC flow sensing functionality with a high sensitivity of 1.035 μA(m s−1)−0.5 mW−1. These insights in the electrical transport of p–4H–SiC aid to improve the performance of p–4H–SiC integrated temperature and flow sensing systems, as well as the design consideration and integration of thermal sensors into 4H–SiC power electronic systems operating at high temperatures of up to 846 K.
dc.description.peerreviewedYes
dc.languageEnglish
dc.publisherJohn Wiley & Sons
dc.publisher.placeGermany
dc.relation.ispartofchapter1801049
dc.relation.ispartofpagefrom1
dc.relation.ispartofpageto7
dc.relation.ispartofjournalAdvanced Engineering Materials
dc.subject.fieldofresearchMicroelectromechanical Systems (MEMS)
dc.subject.fieldofresearchMaterials Engineering
dc.subject.fieldofresearchcode091306
dc.subject.fieldofresearchcode0912
dc.titleThermoresistance of p-Type 4H-SiC Integrated MEMS Devices for High-Temperature Sensing
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.facultyGriffith Sciences, School of Engineering and Built Environment
gro.description.notepublicThis publication has been entered into Griffith Research Online as an Advanced Online Version.
gro.hasfulltextNo Full Text
gro.griffith.authorDimitrijev, Sima
gro.griffith.authorHan, Jisheng
gro.griffith.authorDao, Dzung V.
gro.griffith.authorNguyen, Nam-Trung
gro.griffith.authorPhan, Hoang Phuong
gro.griffith.authorDinh, Toan K.
gro.griffith.authorNguyen Tuan, Khoa
gro.griffith.authorNguyen, Quan H.


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