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  • Mechanism of leakage current increase in p-GaN gate AlGaN/GaN power devices induced by ON-state gate bias

    Author(s)
    Tang, Xi
    Li, Baikui
    Moghadam, Hamid Amini
    Tanner, Philip
    Han, Jisheng
    Li, Hui
    Dimitrijev, Sima
    Wang, Jiannong
    Griffith University Author(s)
    Dimitrijev, Sima
    Tanner, Philip G.
    Year published
    2018
    Metadata
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    Abstract
    An increase in OFF-state leakage current in p-GaN gate AlGaN/GaN high-electron-mobility transistors (HEMTs), induced by ON-state gate bias, was observed and reported in this paper. Higher OFF-state leakage current was observed with higher gate bias voltage and longer bias duration. We propose that the initial increase in OFF-state leakage current and its subsequent decay with time are due to persistent photoconductivity effects in GaN induced by hole injection and electroluminescence during the ON-state gate bias. At room temperature, it took more than 20 s for the increased leakage current to reduce to its equilibrium level ...
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    An increase in OFF-state leakage current in p-GaN gate AlGaN/GaN high-electron-mobility transistors (HEMTs), induced by ON-state gate bias, was observed and reported in this paper. Higher OFF-state leakage current was observed with higher gate bias voltage and longer bias duration. We propose that the initial increase in OFF-state leakage current and its subsequent decay with time are due to persistent photoconductivity effects in GaN induced by hole injection and electroluminescence during the ON-state gate bias. At room temperature, it took more than 20 s for the increased leakage current to reduce to its equilibrium level in the dark. The related physical mechanisms underlying this phenomenon in the p-GaN gate HEMT structure are also proposed.
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    Journal Title
    Japanese Journal of Applied Physics
    Volume
    57
    DOI
    https://doi.org/10.7567/JJAP.57.124101
    Subject
    Mathematical sciences
    Physical sciences
    Engineering
    Microelectronics
    Publication URI
    http://hdl.handle.net/10072/382360
    Collection
    • Journal articles

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