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dc.contributor.authorTang, Xi
dc.contributor.authorLi, Baikui
dc.contributor.authorMoghadam, Hamid Amini
dc.contributor.authorTanner, Philip
dc.contributor.authorHan, Jisheng
dc.contributor.authorLi, Hui
dc.contributor.authorDimitrijev, Sima
dc.contributor.authorWang, Jiannong
dc.date.accessioned2019-06-07T01:33:26Z
dc.date.available2019-06-07T01:33:26Z
dc.date.issued2018
dc.identifier.issn0021-4922
dc.identifier.doi10.7567/JJAP.57.124101
dc.identifier.urihttp://hdl.handle.net/10072/382360
dc.description.abstractAn increase in OFF-state leakage current in p-GaN gate AlGaN/GaN high-electron-mobility transistors (HEMTs), induced by ON-state gate bias, was observed and reported in this paper. Higher OFF-state leakage current was observed with higher gate bias voltage and longer bias duration. We propose that the initial increase in OFF-state leakage current and its subsequent decay with time are due to persistent photoconductivity effects in GaN induced by hole injection and electroluminescence during the ON-state gate bias. At room temperature, it took more than 20 s for the increased leakage current to reduce to its equilibrium level in the dark. The related physical mechanisms underlying this phenomenon in the p-GaN gate HEMT structure are also proposed.
dc.description.peerreviewedYes
dc.languageEnglish
dc.publisherInstitute of Physics Publishing
dc.publisher.placeUnited Kingdom
dc.relation.ispartofchapter124101
dc.relation.ispartofpagefrom1
dc.relation.ispartofpageto4
dc.relation.ispartofjournalJapanese Journal of Applied Physics
dc.relation.ispartofvolume57
dc.subject.fieldofresearchMicroelectronics and Integrated Circuits
dc.subject.fieldofresearchMathematical Sciences
dc.subject.fieldofresearchPhysical Sciences
dc.subject.fieldofresearchcode090604
dc.subject.fieldofresearchcode01
dc.subject.fieldofresearchcode02
dc.titleMechanism of leakage current increase in p-GaN gate AlGaN/GaN power devices induced by ON-state gate bias
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.hasfulltextNo Full Text
gro.griffith.authorDimitrijev, Sima
gro.griffith.authorHan, Jisheng
gro.griffith.authorTanner, Philip G.
gro.griffith.authorAmini Moghadam, Hamid
gro.griffith.authorLi, Hui


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