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  • Ultraviolet and Visible Photodetection Using 3C-SiC/Si Hetero-Epitaxial Junction

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    FoisalPUB3509.pdf (483.6Kb)
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    Accepted Manuscript (AM)
    Author(s)
    Foisal, ARM
    Dinh, T
    Tanner, P
    Phan, HP
    Nguyen, TK
    Iacopi, A
    Streed, EW
    Dao, DV
    Griffith University Author(s)
    Tanner, Philip G.
    Streed, Erik
    Dao, Dzung V.
    Nguyen Tuan, Khoa
    Year published
    2019
    Metadata
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    Abstract
    This paper demonstrates the prospect of using a 3C-SiC/Si heterostructure as an ultraviolet and visible photodetector. The heterojunction has been grown epitaxially on Si-substrate via a Low Pressure Chemical Vapor Deposition technique at 1000 °C. The detector shows a good diode characteristic with a rectification ratio of 1.03 × 103 and a reverse leakage current of 7.2 × 10−6 A at 2 V in dark conditions. The responsivity of the device is found to be 5.4 × 10−2 A/W and 3.18 × 10−2 A/W at a reverse bias of 2 V under visible (635 nm) and UV (375 nm) illumination, respectively. An energy band diagram is proposed to explain the ...
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    This paper demonstrates the prospect of using a 3C-SiC/Si heterostructure as an ultraviolet and visible photodetector. The heterojunction has been grown epitaxially on Si-substrate via a Low Pressure Chemical Vapor Deposition technique at 1000 °C. The detector shows a good diode characteristic with a rectification ratio of 1.03 × 103 and a reverse leakage current of 7.2 × 10−6 A at 2 V in dark conditions. The responsivity of the device is found to be 5.4 × 10−2 A/W and 3.18 × 10−2 A/W at a reverse bias of 2 V under visible (635 nm) and UV (375 nm) illumination, respectively. An energy band diagram is proposed to explain the photosensitivity of the heterostructure.
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    Conference Title
    Smart Innovation, Systems and Technologies
    Volume
    130
    DOI
    https://doi.org/10.1007/978-3-030-04290-5_22
    Copyright Statement
    © 2018 Springer Berlin/Heidelberg. This is the author-manuscript version of this paper. Reproduced in accordance with the copyright policy of the publisher.The original publication is available at www.springerlink.com
    Subject
    Functional materials
    Publication URI
    http://hdl.handle.net/10072/382604
    Collection
    • Conference outputs

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